Abstract:The content of free oxygen Oad at the ZnO grain boundaries has an important impact on the double Schottky barrier and electrical properties of ZnO varistors. In this work, Bi–Er–O pre-synthesized (BE) phase (Bi1-x Er x )2O3 (0.25 < x < 0.455) with high conductivity of Oad was prepared using Bi2O3 and Er2O3 as raw materials, and the effects of the BE phase doping on the phase, grain boundary properties, and electrical properties of ZnO–Bi2O3–Sb2O3–Co2O3–MnO2–Cr2O3–SiO2 varistors were studied. XRD analysis shows that the lattice constant of the BE phase (Bi1-x Er x )2O3 is between (Bi0.75Er0.25)2O3 and BiErO3. With increasing doping content of the BE phase from 0 to 0.75 wt%, part of Er3+ still exists in the form of the BE phase (Bi1-x Er x )2O3 at the ZnO grain boundaries, and its content increases with increasing doping content of the BE phase. The conductivity of Oad in (Bi1-x Er x )2O3 is much higher than that in Bi2O3, resulting in the generation of a large number of negative O′ and O″ at the ZnO grain boundaries, and decreasing concentration of the intrinsic point defect zinc interstice Zni. So the donor concentration N d decreases, the height of the grain boundary barrier increases, the depletion layer widens, and the electrical properties are improved. By analyzing the low-temperature permittivity spectra, it was calculated that with increasing doping content of the BE phase from 0 to 0.75 wt%, the concentration of oxygen vacancy V O • decreases inappreciably, but the concentration of zinc interstice Zn i • • decreases by about 23%. When the doping amount of the BE phase is 0.75 wt%, the nonlinear coefficient α of the obtained ZnO varistors is 73.9 ± 0.6, and the leakage current density J L is only 0.3 ± 0.1 μA/cm2. This study provides an important reference for improving the electrical properties of ZnO varistors by manipulating the Bi-rich phase structure to improve the double Schottky barrier characteristics.

Soft Core Phenomenon of ZnO Varistors Doped with Rare-Earth Oxides

STUDY ON SOFT CORE PHENOMENA OF ZnO-Bi_2O_3 BASED VARISTOR CERAMICS DOPED BY RARE-EARTH OXIDES

Soft Core Behavior in Zno-Bi2o3-Based Varistors Containing Oxides of Ce and Gd

Influence of Rare-earth Oxides on Distribution of Grain Size and Electrical Properties of ZnO-Bi2O3 Varistor Ceramics

Influence of Heat-treatment on ZnO-Bi2O3 Based Varistor Ceramics Doped with Rare Earth Oxides

Sintering Temperature Dependence of Grain Boundary Resistivity in a Rare‐Earth‐Doped ZnO Varistor

The Dielectric Characteristics of Rare Earth Oxides Adulterate with ZnO-Bi2O3 Series Varistor Ceramics

Influence of Y2O3 on Electrical Properties and Dielectric Characteristics in ZnO Based Varistor Ceramics

Electrical Properties of ZnO Varistor Ceramics Modified by Rare Earth-Yttrium and Gallium Dopants

Broadening the Dielectric Stability Temperature Range of BNBST Relaxor Ferroelectric Ceramics by Rare Earth Ce Doping for Energy Storage

The Influence of CeO2on the Microstructure and Electrical Behaviour of ZnO–Bi2O3based Varistors

Effects of the Er2O3 doping on the microstructure and electrical properties of ZnO–Bi2O3 based varistor ceramics

Investigation of Electrical Inhomogeneity in ZnO Varistor Ceramics Based on Electronic Relaxations

Dielectric Spectra of ZnO Varistor Ceramics

Dielectric and Nonlinear Current–voltage Characteristics of Rare–earth Doped CaCu3Ti4O12 Ceramics

Nickel Oxide Doping Effects on Electrical Characteristics and Microstructural Phases of ZnO Varistors with Low Residual Voltage Ratio

Effect of Minor Bi2O3 Doping on the Microstructure and Electrical Nonlinearity of the ZnVSnO Based Varistor Ceramics

Effect of B2O3 Doping on the Microstructure and Electrical Properties of ZnO-Based Varistors

The influence mechanism of high-valence rare earth element doping on the thermoelectric properties of ZnO

Bi–Er–O pre-synthesized phase (Bi1-Er )2O3 doped ZnO varistors with high nonlinear coefficient and low leakage current

Influence of SnO2 on ZnO–Bi2O3–Co2O3 Based Varistor Ceramics