Crystal, Electronic Structures, Optical and Magnetic Properties of Tb4Al2O9

Y. Q. Li,N. Hirosaki,R. J. Xie,T. Takeda,S. E. Lofland,K. V. Ramanujachary
DOI: https://doi.org/10.1016/j.jallcom.2009.05.071
IF: 6.2
2009-01-01
Journal of Alloys and Compounds
Abstract:The crystal and electronic structures, optical and magnetic properties of Tb4Al2O9 have been reported. Polycrystalline Tb4Al2O9 was synthesized by a solid state method at 1600°C for 4h under N2 atmosphere (0.48MPa) using AlN as an in situ reducing agent. Tb4Al2O9 is crystallized in the monoclinic crystal system having space group P21/c with a=0.74831(1)nm, b=1.05569(1)nm, c=1.11507(1)nm, β=108.96(1)0. Tb4Al2O9 was calculated to be a wide band gap semiconductor with indirect band gap energy of about 3.83eV in fair agreement with the experimental value ∼4.59eV obtained from the diffuse reflection spectrum. No photoluminescence of Tb3+ could be observed because of large effects of photoionization and concentration quenching of Tb3+ in Tb4Al2O9. Tb4Al2O9 exhibited weak antiferromagnetic interactions with an effective magnetic moment of near that of the Tb3+ free ion.
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