Room temperature photoluminescence from Zr4+-doped sol–gel silica
Haiping He,Yuxia Wang,Yi Wang,Youming Zou,Zheng Chen,Shuai Yuan
DOI: https://doi.org/10.1016/S0038-1098(03)00276-X
IF: 1.934
2003-01-01
Solid State Communications
Abstract:Intense room-temperature photoluminescence (PL) from the UV to the green region was observed from Zr4+-doped silica synthesized by a sol–gel process using tetraethoxysilane as the precursor, followed by thermal treatment at 500 °C in air. The wide PL band can be resolved into three components centered at 3.70, 3.25, and 2.65eV, respectively. The intensity of the 3.25 and 2.65eV PL bands was greatly enhanced compared with pure sol–gel silica. The 3.70eV emission was assigned to non-bridging oxygen hole centers, while the 2.65eV one originated from neutral oxygen vacancies (VO). The 3.25eV PL band was most likely associated with E′ centers, as supported by electron spin resonance measurement. It was proposed that the Zr4+-doping leads to oxygen deficiency in the silica, thus resulting in enhancement of the density of VO and E′ center defects.