Mechanisms of Interfacial Reaction and Matrix Phase Transition in SiCf/Ti65 Composites
Wang Chao,Zhang Xu,Wang Yumin,Yang Qing,Yang Lina,Zhang Guoxing,Wu Ying,Kong Xu,Yang Rui
DOI: https://doi.org/10.11900/0412.1961.2020.00027
IF: 1.797
2020-01-01
ACTA METALLURGICA SINICA
Abstract:Continuous silicon carbide (SIC) fiber-reinforced titanium metal-matrix composites (TMCs ) are potential candidates for high temperature application in jet engines because of their high specific strength and stiffness. However, severe interfacial reactions caused by high temperature manufacture and service have a detrimental effect on the mechanical properties of composites. Furthermore, the phase transition occurred in matrix at elevated temperature is unfavorable to the properties. In this work, the interfacial reaction, matrix phase transformation and thermal stability of SiC/Ti65 composites were investigated. The composites were prepared by the combination of magnetron sputtering and hot isostatic pressing (HIP) method. Matrix-coated precursor wires prepared by sputtering were aligned, degased and encapsulated, then consolidated by HIP. And the densified composites were subjected to long-term thermal exposure at 650, 750, 800 and 900 degrees C respectively. Reaction products and element diffusion of SiCf/ Ti65 composites in different conditions were studied. The results show that the elements diffuse and participate in both interfacial reaction and matrix phase transition during HIP and thermal exposure process. In the as-processed SiCf/Ti65 composites, TIC is the main product of interfacial reaction layer, and (Zr, Nb)(5)Si-4 is the product of matrix phase transition. With the continuous consumption of C-coating layer in the process of thermal exposure, Ti5Si3 and (Zr, Nb)(5)Si-4 form in the interfacial reaction layer, while Ti-3(Al, Sn)C and TiC precipitate in the matrix. The results of thermal stability study indicate a parabolic correlation between interfacial reaction layer thickness and exposure time, and the activation energy of reaction layer growth estimated by Arrhenius equation is 93 kJ/mol. The interface of SiCf/Ti65 composites is stable below 650 degrees C.