Surface Modification for Epitaxial Growth of Single Crystalline Cobalt Thin Films with Uniaxial Magnetic Anisotropy on GaN(0001)-1×1 Surfaces

H. D. Li,K. He,M. H. Xie,N. Wang,J. F. Jia,Q. K. Xue
DOI: https://doi.org/10.1088/1367-2630/12/7/073007
2010-01-01
New Journal of Physics
Abstract:Epitaxial growth and magnetic properties of Co thin films on GaN(0001)-1×1 surfaces are studied. The films show degraded saturation magnetization due to the interfacial interaction. On excess-Ga-induced pseudo-1×1 surface, 30°-rotation domains in the Co epilayer are inevitable and the films show in-plane magnetic anisotropy. By annealing the starting surface of pseudo-1×1 and to achieve a Ga-less 1×1 surface, single domain Co epifilms having orientations aligned with the substrate can be grown, which facilitates in-plane uniaxial magnetic anisotropy.
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