Coaxial Nanocables of P-Type Zinc Telluride Nanowires Sheathed with Silicon Oxide: Synthesis, Characterization and Properties

Y. L. Cao,Y. B. Tang,Y. Liu,Z. T. Liu,L. B. Luo,Z. B. He,J. S. Jie,Roy Vellaisamy,W. J. Zhang,C. S. Lee,S. T. Lee
DOI: https://doi.org/10.1088/0957-4484/20/45/455702
IF: 3.5
2009-01-01
Nanotechnology
Abstract:Coaxial nanocables with a single-crystalline zinc telluride (ZnTe) nanowire core and an amorphous silicon oxide (SiOx) shell have been synthesized via a simple one-step chemical vapor deposition (CVD) method on gold-decorated silicon substrates. The single-crystal ZnTe nanowire core is in zinc-blende structure along the [111] direction, while the uniform SiOx shell fully covers the core with no observable pin-hole or crack. Formation mechanisms of the ZnTe-SiOx nanocables are discussed. The ZnTe nanowire core shows p-type electrical properties while the SiOx shell acts as an effective insulating layer. The ZnTe-SiOx nanocables may have potential applications in nanoscale devices, such as p-type FETs and nanosensors.
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