Abstract:Perovskite manganites are viewed as one of the key building blocks of oxide spintronics devices due to their attractive physical properties. However, cation off‐stoichiometry at epitaxial interfaces between manganites and other materials can lead to interfacial dead layers, severely reducing the device performance. Here, transmission electron microscopy and synchrotron‐based spectroscopy are used to demonstrate that oxygen vacancies during growth serve as a critical factor for modifying the cation stoichiometry in pulsed laser deposited La0.8Sr0.2MnO3 films. Near the film/substrate (SrTiO3) interface, A‐site cations (La/Sr) are in excess when oxygen vacancies are induced during film growth, partially substituting Mn. Simultaneously, Sr cations migrate towards the film surface and form a SrO rock‐salt monolayer. Consequentially, a gradient of the Mn nominal valence is observed along the film growth direction, leading to anomalous magnetic properties. The results narrow the selection range of useful oxygen pressures during deposition and demonstrate that accurate cation stoichiometry can only be achieved after oxygen vacancies are eliminated during growth. This finding suggests that the oxygen pressure serves as a tuning parameter for the interfacial dead layers and, hence, for control over device properties. During film growth, oxygen vacancies modify the cation stoichiometry in pulsed laser deposited La0.8Sr0.2MnO3 films. Mn is partially substituted by La/Sr cations near strained interfaces, leading to a gradient in the Mn nominal valence along the film growth direction. Without elimination of oxygen vacancies during growth, anomalous magnetic properties will prevent the controlled fabrication of spintronic devices.

Vacancy defects in epitaxial La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> thin films probed by a slow positron beam

The band structure and Fermi surface of La$_{0.6}$Sr$_{0.4}$MnO$_{3}$ thin films studied by in-situ angle-resolved photoemission spectroscopy

Oxygen Vacancies and Induced Changes in the Electronic and Magnetic Structures of La0.66sr0.33mno3: A Combined Ab Initio and Photoemission Study

Oxygen vacancy induced electronic structure variation in the La0.2Sr0.8MnO3 thin film

Strain-Induced Modulation of Oxygen Vacancies and Magnetic Properties in La0.5sr0.5mno3 Thin Films

Epitaxial growth and properties of La0.7Sr0.3MnO3 thin films with micrometer wide atomic terraces

Epitaxial strain and thickness dependent structural, electrical and magnetic properties of La0.67Sr0.33MnO3 films

Combined iDPC and EELS analyses for quantifying oxygen vacancy concentration in LSMO

Low-Field Magnetoresistance in Oxygen-Deficient La0.5sr0.5mno3 Thin Films As Approached by Spin-Polarized Tunneling Model

Characterisations of La-Sr-Mn-O (LSMO) Thin Film Fabricated by RF Sputtering

Interface and Surface Cation Stoichiometry Modified by Oxygen Vacancies in Epitaxial Manganite Films

Positron Annihilation Studies on the Behaviour of Vacancies in Laalo3/Srtio3 Heterostructures

Low field magnetoresistance in La1-XSrXMnO3-delta thin films: effect of two-phase microstructure and oxygen deficiency

Low field magnetoresistance in La1-xSrxMnO 3-δ thin films: Effect of two-phase microstructure and oxygen deficiency

Surface and interface effects in oxygen deficient SrMnO$_3$ thin films grown on SrTiO$_3$

The Origin of Oxygen Vacancies Controlling La2/3sr1/3mno3 Electronic and Magnetic Properties

Impact of the Oxygen Content on the Electronic Properties in Epitaxial Thin Films of Electron-Doped La<sub>0.9</sub>Hf<sub>0.1</sub>MnO<sub>3</sub>

Spectroscopic characterization of electronic structures of ultra-thin single crystal La0.7Sr0.3MnO3

Interrelation of epitaxial strain and oxygen deficiency in La0.7Ca0.3MnO3-δ thin films

Structural and transport properties of manganese oxides with rare earth vacancies

Optimized fabrication of high quality La0.67Sr0.33MnO3 thin films considering all essential characteristics