Arithmetic Unit Design Using 180nm TSV-based 3D Stacking Technology

J. Ouyang,G. Sun,Y. Chen,L. Duan,T. Zhang,Y. Xie,M. J. Irwin
DOI: https://doi.org/10.1109/3dic.2009.5306565
2009-01-01
Abstract:We describe the design of two three dimensional arithmetic units (a 3D adder and a 3D multiplier) that are implemented using through-silicon-via 3D stacking technology. Compared to their 2D counterparts, our 3D adder incurs 10.6-34.3% less delay and 11.0-46.1% less energy when the width increases from 12-bit to 72-bit; the 32x32 3D multiplier incurs 14.4% less delay and 6.8% less energy, according to the post place and route results. The prototype chip including the implementations of a 3D adder, a 3D multiplier, and simple test interface has been delivered for fabrication in MIT Lincoln Laboratory, using their 3-tier SOI based 3D technology.
What problem does this paper attempt to address?