Preparation of Black Silicon by Means of Wet Etching

ZHANG An-yuan,WU Zhi-ming,ZHAO Guo-dong,JIANG Jing,GUO Zhen-yu
DOI: https://doi.org/10.3969/j.issn.1004-373X.2011.18.041
2011-01-01
Abstract:A simple method of preparing black silicon(BS) with high optical absorptivity is introduced.During the preparation,the chemical vapor deposition and photolithography are employed to form a nitride mask on the surface of silicon(100),and then two kinds of wet etching are used to prepare the black silicon material.The first step is that the anisotropic etching on a silicon wafer is performed with the method of alkali etching to form the tip morphology on the silicon surface.After that,some gold nanoparticles are taken as the catalyst to modify the surface of the silicon by the method of acid etching for forming a porous structure on the silicon surface.The optical absorptivity of the black silicon can reach 95% at the wavelength of 250~1000 nm.
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