Energy dissipation in Bi2Sr2CaCu2O8+δ single crystal

S.J. Feng,J. Ma,H.D. Zhou,G. Li,L. Shi,Y. Liu,J. Fang,X.-G. Li
DOI: https://doi.org/10.1016/S0921-4534(02)02112-3
2003-01-01
Abstract:The in-plane resistivity of Bi2Sr2CaCu2O8+δ single crystal in different magnetic fields was measured for magnetic field H parallel and perpendicular to the CuO2 plane. The irreversibility line Hirr⊥c(T) for H parallel to the CuO2 plane locates in higher field and higher temperature region in the H–T phase diagram than Hirr∥c(T) for H perpendicular to the CuO2 plane. Hirr∥c(T) is dominated by surface barrier pinning, while Hirr⊥c(T) shows different temperature dependencies above and below 2 T, which may indicate different energy dissipation above and below the field. The field dependence of activation energy above 2 T in H⊥c configuration could be explained by vortex–antivortex expansion in CuO2 plane.
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