Electric and Magnetic Behaviour in Double Doped La2/3+4x/3Sr1/3−4x/3Mn1−xMgxO3

Qu Zhe,Pi Li,Fan Ji-Yu,Tan Shun,Zhang Bei,Zhang Meng,Zhang Yu-Heng
DOI: https://doi.org/10.1088/1009-1963/16/1/044
2007-01-01
Abstract:The double-doped La2/3+4x/3Sr1/3-4x/3Mn1-xMgxO3 samples with fixed Mn3+/Mn4+ ratio equal to 2/1 are investigated by means of magnetism and transport measurements. Phase separation is observed at temperature higher than T-c(onset) for x = 0.10 and 0.15. For x = 0.10, rather strong phase separation induces drastic magnetic random potential and results in the localization of carriers. Thus, the variable-range hopping process dominates. For other samples, there is no or only weak phase separation above T-c(onset). Thus, thermal activation mechanism is responsible for the high temperature transport behaviour. For x = 0.20 and 0.25, unexpected AFM behaviour is observed at low temperature. All these results are well understood by considering the special role of the "double-doping".
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