The Critical Current Density Distribution in a TlBaCaCuO Thin Film Ring Resonator

YJ FENG,QH CHENG,PH WU,HM LIU,SL YAN,L FANG,HL CAO
DOI: https://doi.org/10.1016/0038-1098(94)90511-8
1994-01-01
Abstract:Low temperature scanning electron microscopy (LTSEM) offers the possibility for spatially resolved investigation of superconducting properties of the integrated microwave devices made of high T c thin films. In this paper the LTSEM has been used to study the spatial distribution of the critical current density J c in a millimetre-wave microstripline ring resonator made of TlBaCaCuO thin film. The resonator was patterned by standard photolithography and wet etching on a TlBaCaCuO thin film fabricated by DC sputtering on a LaAlO 3 substrate with post-annealing. The experimental result shows that the inhomogeneity of the J c distribution in the device is not very serious. The maximum local critical current density is less than 1.5 times the minimum local critical current density. It seems to us that the J c distribution in the ring area is determined by the inhomogeneity of the superconducting properties of the thin film and is not influenced by the geometrical pattern of the device.
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