Abstract:Because digital information in semiconductor spintronics is encoded,stored,processed,and transferred by electron spins instead of its charge,the operation of a spintronic device requires that electrons in semiconductors are spin polarized.But spin states of electrons in traditional semiconductor materials are usually degenerate,therefore,conventional semiconductors cannot are directly exploited to design spintronic devices.Thus,how to spin polarized electrons in ordinary semiconductors (also called spin injection) including its effective manipulation has become an important direction of research.In physics,either Zeeman effect between electron spins and external magnetic fields or spin-orbit coupling of electron spins and its spatial momentums can be employed to achieve electron-spin polarization.According to these physical mechanisms,some effective schemes have been developed successfully,such as spin filtering,temporally separating electron-spins,spatial separations of electron spins,and so on.Utilizing theoretical analysis combined with numerical calculation,transmission time is investigated by considering both Zeeman effect as well as Rashba and Dresselhaus spin-orbit couplings for electron in magnetically confined semiconductor nanostructure,which is constructed on the GaAs/Al x Ga 1-x As heterostructure.Schrödinger equation of an electron is numerically solved by matrix diagonalization and improved transfer-matrix method.Adopting H.G.Winful's theory,dwell time of electron is calculated and spin polarization ratio is given.Due to Zeeman effect and spin-orbit coupling,dwell time of electron is obviously associated with the spins,which is used to separate electron-spins in time dimension and to realize spin polarization of electrons in semiconductors.Because the semiconductor GaAs has a small effective g-factor,electron-spin polarization originates mainly from spin-orbit coupling including Rashba and Dresselhaus types,which is circa 4 times larger than that induced by Zeeman effect.Dwell time of electron and its spin polarization can be efficaciously modified by interfacial confining electric-field or strain engineering,as the effective potential of electron is related to spin-orbit coupling's strength.These interesting findings not only have some references for spin injection into semiconductors,but also provide a controllable temporal electron-spin splitter for semiconductor spintronics device applications.

Spin polarization in nanotubes

Spin-Dependent Transport at 2D Solids: from Nonmagnetic Layers to Ferromagnetic Van Der Waals Structures.

Spin Filtering in the Double-Barrier Structure

Transmission time and spin polarization for electron in magnetically confined semiconducotr nanostructure modulated by spin-orbit coupling

Spin stripes in nanotubes

Spin Filtering through Single-Wall Carbon Nanotubes Functionalized with Single-Stranded DNA

Electric Field Control of Spin Transport

Electrical Spin Injection and Transport in Semiconductor Nanowires: Challenges, Progress and Perspectives

Spin polarization in time domain for electrons in a magnetic microstructure

Spin-Dependent Transport in Diluted-Magnetic-Semiconductor/Semiconductor Quantum Wires

Carbon nanotubes for coherent spintronic devices

Spin Polarized Transport of an Interacting Quantum Dot

Spin Transport Property of Cr2C Based Nanoscale Devices: A First Principle Study

Spintronics in Two-Dimensional Materials

Spin-flip Mesoscopic Transport Through a Carbon Nanotube Quantum Dot System

Low Dimensional Nanomaterials for Spintronics

Transformation of spin information into large electrical signals via carbon nanotubes

Spin Polarization Through Resonant Tunnelling in a Magnetic Double-Barrier and Double-Well Quantum Structure

Spin transmission in a series of magnetic barrier structure

Promising Spin Caloritronics and Spin Diode Effects Based on 1T-Fecl2 Nanotube Devices

Electrically controlled spin reversal and spin polarization of electronic transport in nanoporous graphene nanoribbons