Abstract:Most of the research on silicon-on-insulator integrated circuits so far has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 μm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 μm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands. We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 μm up to 2.55 μm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 μm [1]. Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB [2] in these silicon waveguides. By using this broadband parametric gain a silicon-based synchronously pumped optical parametric oscillator (OPO) is constructed [3]. This OPO is tunable over 70 nm around a central wavelength of 2080 nm. Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 μm to the telecommunication band with efficiencies up to +19.5 dB [4]. One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid-IR to the telecom window after which they can be detected by a high-sensitivity telecom-band optical receiver.

Integrated Nano-Structured Silicon Waveguides and Devices for High-Speed Optical Communications

On-Chip Integration of Optical Nanofibers and Nanowires

Broadband and High-Performance Devices for the Silicon and Silicon-Nitride Platforms

Development of Silicon Photonic Devices for Optical Interconnects

Silicon photonics for high-speed communications and photonic signal processing

Silicon Photonic Network-on-chip and Enabling Components

High-Performance Silicon Photonics Using Heterogeneous Integration

Optical Signal Processing In Silicon Nano-Waveguides

On-chip Wavefront Shaping in Spacing-Varied Waveguide Arrays

Nonlinear Third Order Silicon Photonics Enabled by Dispersion and Subwavelength Engineering

Recent Advances in Photonic Integrated Circuits

Multifunctional Optical Waveguide Chips

High-Performance Passive Silicon Photonic Waveguide Devices: Progress and Challenges

Advanced silicon device technologies for optical interconnects

Slow Light and Signal Processing in Silicon Nano-waveguides

Single-mode Dispersion-engineered Nonlinear Integrated Waveguides for Ultra-broadband Optical Amplification and Wavelength Conversion

Ultrahigh-Bandwidth Silicon Photonic Nanowire Waveguides for On-Chip Networks

Compact Silicon-Based Wavelength-Selective Photonic Integrated Devices and the Applications

Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

Technology for high density optical integration on silicon

High-performance silicon photonics technology for telecommunications applications