Abstract:In this article we study the static polarization in ABC-stacked multilayer graphene. Since the density of states diverges for these systems if the number of layers exceeds three, screening effects are expected to be important. In the random phase approximation, screening can be included through the polarization. We derive an analytical integral expression for the polarization in both the full-band model and an effective two-band model. Numerical evaluation of these integrals are very time consuming in the full-band model. Hence, for ABC-stacked trilayer graphene, we use the two-band model to calculate the low momentum part of the polarization. The results for the two-band model are universal, i.e. independent of doping. The high momentum part is linear and is determined by calculating two points, such that we can determine the slope. For ABC stacked trilayer graphene, the slope is given by three times the monolayer value. We compare our results to previous ones in the literature and discuss the similarities and discrepancies. Our results can be used to include screening in ABC-stacked multilayer systems in a way that all the characteristics of the polarization function are included. The numerical results for the polarization of trilayer graphene are used to sketch the screened potential.

Spectroscopic Measurement of Interlayer Screening in Multilayer Epitaxial Graphene.

Substrate Induced Bandgap in Multilayer Epitaxial Graphene on the 4H-Sic (000(1)Over-Bar) Surface

Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC

Screening in multilayer graphene

Ultrafast Dynamics and Interlayer Thermal Coupling of Hot Carriers in Epitaxial Graphene

Identification of Dominant Scattering Mechanism in Epitaxial Graphene on Sic

Evidence for Interlayer Electronic Coupling in Multilayer Epitaxial Graphene from Polarization-Dependent Coherently Controlled Photocurrent Generation

Ultrafast dynamics of charge transfer in CVD grown MoS2-graphene heterostructure

Thickness Estimation of Epitaxial Graphene on SiC using Attenuation of Substrate Raman Intensity

Interlayer Thermal Coupling of Hot Dirac Fermions in Epitaxial Graphene

Determination of Graphene Work Function and Graphene-Insulator-semiconductor Band Alignment by Internal Photoemission Spectroscopy

Antiscreening and Nonequilibrium Layer Electric Phases in Graphene Multilayers

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

Anti-screening and nonequilibrium layer electric phases in graphene multilayers

Ultrafast Spectroscopy of Multilayer Epitaxial Graphene

Probing Electron–electron Interactions in Multilayer Epitaxial Graphene Grown on SiC Using Temperature-Dependent Hall Slope

Infrared Spectroscopy of Wafer-Scale Graphene

Hot Dirac Fermions in Epitaxial Graphene

Nano-infrared imaging of epitaxial graphene on SiC revealing doping and thickness inhomogeneities

Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC

Band structure engineering of epitaxial graphene on SiC by molecular doping