Effect of bias voltage applied to target in hybrid- acceleration ion implantation system

Zong-tao ZHU,Chun-zhi GONG,Zhi-jian WANG,Xiu-bo TIAN,Shi-qin YANG,Fu Ricky

DOI: https://doi.org/10.3969/j.issn.0254-6086.2012.03.013

2012-01-01

Abstract:The effect of bias voltage applied to target on the ion dynamic behavior of hybrid acceleration ion implantation based on target-acceleration is investigated by PIC/MCC simulation.Our interests are mainly focused on the variations of ion energy,implantation dose,and incident angle,as well as implantation region on target with different amplitudes of bias voltage.The results show that the potential contours above the target with negative pulse bias voltage become curved because of downstream movement of beam-line ions.Simultaneously,the gradually changing electric field also affects the trajectories of flying ions.The potential edge(0V) expands forward and the region influenced by electrical field of target increases with increasing the amplitude of bias voltage.The dose and average energy of ions implanted into the surface of target increase due to the increasing velocity of ions,which are effectively accelerated by the bias voltage applied to the target.Although some of ions within curved electric field lines deflect,the average incident angle is still relatively low and the amplitude of bias voltage has no significant influence on the incident angle.Due to the deflection of beam-line ions induced by the electric filed of target,the area of implantation region on the surface of target with higher bias voltage is larger than that with lower bias voltage.