Yellow Organic Light-Emitting Devices Based on NPBX Doped CzHQZn

GAO Yong-hui,JIANG Wen-long,DING Gui-ying,CONG Lin,MENG Zhao-hui,OUYANG Xin-hua,ZENG He-ping
DOI: https://doi.org/10.3788/yjyxs20112601.0044
2011-01-01
Abstract:The performance of yellow organic light-emitting devices(OLEDs) based on a novel material [(E)-2-(2-(9-ethyl-9H-carbazol-3-yl)vinyl) quinolato-zinc(CzHQZn)] with an emitting/hole-transporting layer as an acceptor was investigated.These devices were fabricated as follows: ITO/2T-NATA(30 nm)/NPBX∶25% CzHQZn(x nm)/BCP(10 nm)/Alq3(60-x) nm/LiF(0.5 nm)/Al(x: the thickness of doping layer).The x is 15,20,25,30 nm,respectively,the thickness of Alq3 is correspondingly changed,the total thickness of doping layer and Alq3 is a constant of 60 nm.When x is 20 nm,the thickness of Alq3 is 40 nm,a yellow OLED can be obtained with the CIE coordinates of(0.514 6,0.470 5),the luminance of 1.078 cd/m2 at 4 V.The maximum luminance is 449 0 cd/m2 at 14 V,and the maximum luminous efficiency is 0.98 cd/A.
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