Abstract:The present work is concerned with studying accurately the energy-loss processes that control the thermalization of hot electrons and holes that are generated by high-energy radiation in wurtzite GaN, using an ab initio approach. Current physical models of the nuclear/particle physics community cover thermalization in the high-energy range (kinetic energies exceeding ~100 eV), and the electronic-device community has studied extensively carrier transport in the low-energy range (below ~10 eV). However, the processes that control the energy losses and thermalization of electrons and holes in the intermediate energy range of about 10-100 eV (the "10-100 eV gap") are poorly known. The aim of this research is to close this gap, by utilizing density functional theory (DFT) to obtain the band structure and dielectric function of GaN for energies up to about 100 eV. We also calculate charge-carrier scattering rates for the major charge-carrier interactions (phonon scattering, impact ionization, and plasmon emission), using the DFT results and first-order perturbation theory. With this information, we study the thermalization of electrons starting at 100 eV using the Monte Carlo method to solve the semiclassical Boltzmann transport equation. Full thermalization of electrons and holes is complete within ~1 and 0.5 ps, respectively. Hot electrons dissipate about 90% of their initial kinetic energy to the electron-hole gas (90 eV) during the first ~0.1 fs, due to rapid plasmon emission and impact ionization at high energies. The remaining energy is lost more slowly as phonon emission dominates at lower energies (below ~10 eV). During the thermalization, hot electrons generate pairs with an average energy of ~8.9 eV/pair (11-12 pairs per hot electron). Additionally, during the thermalization, the maximum electron displacement from its original position is found to be on the order of 100 nm.

Hot-electron Energy-Loss Rate in Polar Semiconductors in a Two-Temperature Model

A Non-Equilibrium Approach to Coupled-Mode-Induced Hot-Electron Energy Loss Rate

Hot-Electron Transport and Coupled-Mode Optic Phonon in A Polar Semiconductor

EFFECT OF THE NONEQUILIBRIUM DISTRIBUTION FUNCTION ON THE ENERGY LOSS RATE OF HOT ELECTRONS IN A SEMICONDUCTOR

Nonlinear Balance Equations for Hot-Electron Transport with Finite Phonon-Relaxation Time

Quasiadiabatic Electron Transport in Room Temperature Nanoelectronic Devices Induced by Hot-Phonon Bottleneck

Energy Relaxation of Hot Electrons Driven by Intense Terahertz Fields in Two-Dimensional Semiconductor Systems

A first-principles approach to closing the "10-100 eV gap" for charge-carrier thermalization in semiconductors

Comparison of Cooling Rates for Hot Carriers in GaAs/AlAs Quantum Wells Based on Macroscopic and Microscopic Phonon Models

Influence of Longitudinal Electric Field on the Hot-Phonon Effect in Quantum Wells

Hot electrons in low-dimensional phonon systems

Phonon-drag Effects on Thermoelectric Power.

Nonequilibrium total dielectric function approach to the electron Boltzmann equation for inelastic scattering in doped polar semiconductors

Electron Heat Source Driven Heat Transport in GaN at Nanoscale: Electron–Phonon Monte Carlo Simulations and a Two Temperature Model

Optic-Phonon-Limited Mobility in A Polar Semiconductor

Temperature-Dependent Contact of Weakly Interacting Single-Component Fermi Gases and Loss Rate of Degenerate Polar Molecules

Hot electron cooling by acoustic phonons in graphene

Nonequilibrium Effects on the Electron-Phonon Coupling Constant in Metals

NONEQUILIBRIUM PHONON EFFECTS ON HOT CARRIER TRANSPORT AND THERMAL NOISE IN SEMICONDUCTOR HETEROSTRUCTURES

An Electron–phonon Monte Carlo Study on Thermal Transport in GaN