Hot electrons in low-dimensional phonon systems

S.-X. Qu,A. N. Cleland,M. R. Geller

DOI: https://doi.org/10.1103/PhysRevB.72.224301

2005-03-16

Abstract:A simple bulk model of electron-phonon coupling in metals has been surprisingly successful in explaining experiments on metal films that actually involve surface- or other low-dimensional phonons. However, by an exact application of this standard model to a semi-infinite substrate with a free surface, making use of the actual vibrational modes of the substrate, we show that such agreement is fortuitous, and that the model actually predicts a low-temperature crossover from the familiar T^5 temperature dependence to a stronger T^6 log T scaling. Comparison with existing experiments suggests a widespread breakdown of the standard model of electron-phonon thermalization in metals.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is about the applicability of the electron - phonon coupling model in low - dimensional systems. Specifically, the traditional electron - phonon coupling model has encountered challenges when explaining the experimental results in metal films. The traditional model assumes a three - dimensional free - electron gas and phonons described by a continuous medium, and ignores the influence of factors such as boundary thermal resistance. However, in actual experiments, especially under low - temperature conditions, the surface of the metal film or the low - dimensional phonon mode has a significant impact on the electron - phonon coupling, resulting in the inconsistency between the experimental results and the theoretical predictions.

### Core problems of the paper

1. **Limitations of the traditional model**:
- The traditional model shows good consistency when explaining some experimental results, but shows differences in temperature dependence in other experiments.
- Especially under low - temperature conditions, the experimental results show a stronger temperature dependence (such as \( T^6 \log T \)), which is inconsistent with the \( T^5 \) temperature dependence predicted by the traditional model.

2. **Influence of low - dimensional effects**:
- Experiments usually involve thin metal films deposited on semiconductor or insulating substrates, and the phonon modes of these systems are affected by the exposed stress - free surface.
- The author points out that when considering the actual vibration modes, the standard model cannot accurately describe the electron - phonon coupling behavior of these low - dimensional systems.

### Specific research contents

- **Accurate application of the standard model**: By accurately applying the standard model to a system with a free surface on a semi - infinite substrate, the author shows that this consistency is accidental, and the model actually predicts a low - temperature crossover phenomenon from \( T^5 \) to \( T^6 \log T \).
- **Comparison with experiments**: The comparison with the existing experimental results shows that the standard model has a wide range of failures when considering the actual vibration modes.
- **Theoretical derivation**: The author derives in detail the vibration eigenfunctions of different branches (such as SH, ±, 0 and Rayleigh modes), and calculates the corresponding weighted vibrational density of states \( F(\omega) \), thereby obtaining the expression of the thermal power \( P \).

### Main conclusions

- **Low - temperature crossover phenomenon**: At low temperatures, due to the stress - free condition on the metal surface penetrating into the interior of the film, the strain is reduced, thereby enhancing the electron - phonon coupling. This effect makes the temperature exponent increase, manifested as the crossover from \( T^5 \) to \( T^6 \log T \).
- **Experimental verification**: Although many experiments have reached temperatures far below \( T^\star \), this crossover behavior has not been observed yet, which suggests that there may be other unidentified mechanisms to enhance thermal coupling.

### Formula summary

- The expression of the thermal power \( P \) is:
\[
P = \frac{v_l^4 \Sigma V_{el}}{24 \zeta(5)} \int_0^{\omega_D} d\omega F(\omega) \left( \frac{\omega}{e^{\omega/T_{el}} - 1} - \frac{\omega}{e^{\omega/T_{ph}} - 1} \right)
\]
where \( \Sigma \) is a coefficient and \( F(\omega) \) is the weighted vibrational density of states.

- The expression of \( F(\omega) \) in the low - temperature limit is:
\[
F(\omega) \rightarrow F_{bulk}(\omega) \times \left[ -\lambda \left( \frac{\omega d}{c_R} \right) \ln \left( \frac{\omega d}{c_R} \right) + O \left( \frac{\omega d}{c_R} \right) \right]
\]

In conclusion, this paper reveals the limitations of the standard electron - phonon coupling model in low - dimensional systems and proposes a new theoretical framework to explain the abnormal behavior in experiments.