The optimal analysis of Siegman rate equations of passively Q-switched microchip laser

SHI Guang,LIAO Yun,WANG Yun-xiang,YAN Ping,GONG Ma-li

DOI: https://doi.org/10.3969/j.issn.1001-3806.2005.06.020

2005-01-01

Abstract:Siegman rate equations for passive Q-switch lasers are deeply discussed.In order to fit the emulational application exactly,the original rate equations are improved and applied in the optimal design of such a passive Q-switch laser.

What problem does this paper attempt to address?

Optimization of Passively Q-switched Nd:YAG/Cr:YAG Microchip Lasers and Experiments

田信宁,闫平,柳强,巩马理,廖云

DOI: https://doi.org/10.3321/j.issn:1002-1582.2004.06.029

2004-01-01

Optical Technique

Abstract:Through the numerical method to resolve the rate equation, an optimization of Q-switched microchip lasers is demonstrated. First, from the numerical result of rate equation, the effect of the key parameters to the passively Q-switched lasers is brought, including the initial transmission of the absorber, the reflection of output coupler, the remaining round-trip dissipative optical loss and the radius of the pumping laser beam. Then, based on the results of numerical solution, techniques for optimization of passively Q-switched microchip lasers are brought forward, such as reducing the length of laser cavity and the remaining round-trip dissipative optical loss, choosing appropriate reflection of output coupler and the initial transmission of the absorber. Final, the optimization effect is demonstrated by two kinds of passively Q-switched Nd∶YAG/Cr∶YAG microchip lasers made in lab.
Rate Equation Analysis of High Speed Q-Modulated Semiconductor Laser

Dekun Liu,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1109/jlt.2010.2077671

IF: 4.7

2010-01-01

Journal of Lightwave Technology

Abstract:Dynamic response of a Q-modulated semiconductor laser is simulated based on a rate equation model. Numerical results from both small-signal and large-signal analyses show that the Q-modulation has much higher bandwidth limit and smaller wavelength chirp than the direct modulation. It is shown that a high-extinction-ratio, low-chirp modulation of 40 GHz RZ signal can be achieved and the effects of various parameters on the Q-modulation are discussed. In addition to high-speed communications, the Q-modulated laser is particularly suitable for microwave carrier generation in radio-over-fiber systems.
Pulse Control of Passively Q-Switched Microchip Laser with Cw Pumping Modulation

WY Wang,ML Gong,GF Jin

DOI: https://doi.org/10.1117/12.369433

1999-01-01

Abstract:In order to improve the stability of passively Q-switched lasers we put forward a kind of pre-pumping mechanism(1). Based on this mechanism we deduce an analytical expression which can be used to calculate or optimize the important parameters of passively Q-switched lasers. The analytical expression has been discussed in detail and the results can also be used in many cases of passively Q-switched lasers.
Theoretical Modelling of Single-Mode Lasing in Microcavity Lasers Via Optical Interference Injection.

Ling-Fang Wang,Yun-Ran Wang,Henry Francis,Ri Lu,Ming-Jun Xia,Feng Liu,Mark Hopkinson,Chao-Yuan Jin

DOI: https://doi.org/10.1364/oe.389860

IF: 3.8

2020-01-01

Optics Express

Abstract:The effective manipulation of mode oscillation and competition is of fundamental importance for controlling light emission in semiconductor lasers. Here we develop a rate equation model which considers the spatially modulated gain and spontaneous emission, which are inherently governed by the ripple of the vacuum electromagnetic field in a Fabry-Pérot (FP) microcavity. By manipulating the interplay between the spatial oscillation of the vacuum field and external optical injection via dual-beam laser interference, single longitudinal mode operation is observed in a FP-type microcavity with a side mode suppression ratio exceeding 40 dB. An exploration of this extended rate equation model bridges the gap between the classical model of multimode competition in semiconductor lasers and a quantum-optics understanding of radiative processes in microcavities.
Theoretical Analysis for Self-Q-Switched Laser Diode Pumped Solid-State Laser

徐震,何永学,吴念乐,李师群

DOI: https://doi.org/10.3321/j.issn:0253-2239.2003.10.014

2003-01-01

Abstract:The behavior of self-Q-switched diode pumped solid-state laser (DPSSL) has been investigated by numerical simulation by using the rate equations of solid-state lasers. Analytical formulas for the peak power, pulse energy, pulse width, energy extraction efficiency, repetition rate and average output power are derived. The optimal length of self-Q-switch crystal with minimized threshold pump power and the optimal length with maximized light-light efficiency are obtained.
Analysis of chirping characteristics of a semiconductor optical amplifier

Tao Jin,Wen Zhou,Dexiu Huang

1998-01-01

Abstract:A theoretical model for analyzing the chirping characteristics of a traveling-wave semiconductor optical amplifier was improved. The factors of the finite facet reflectivity and the spontaneous emission are considered in the model. The theoretical research shows that introducing these factors will reduce the amplitude of nonlinear frequency chirping imposed on amplified light pulse.
Analytical solution for passive Q-switching with Cr-ion doped saturable absorber

Nianle Wu,YaJun L��,XingHua Lu,Jiaqiang Li,Shiqun Li

1996-01-01

Abstract:The behavior of passive Q-switching with a slow saturable absorber was analyzed. From the simplified rate equations for passive Q-switching, the criteria for passive Q-switching using a saturable long recovery time and excited state absorption, and the analytical formulas for the peak power, pulse energy, pulse width and energy extraction efficiency were derived. The general results have applications in the optimal design of such passive Q-switched lasers.
Dynamics of Diode-Pumped Microchip Laser Passively Q-switched with Cr:YAG

WY Wang,ML Gong,GF Jin

DOI: https://doi.org/10.1117/12.369432

1999-01-01

Abstract:The reason for the instability of passively Q-snitched lasers has been analyzed. Based on those reasons a novel model named pre-pumping passively Q switching is presented. The model we developed accounts for the properties of the lasing material, the saturable absorber, the pumping power and the resonator. With the aid of new factor f(p), we calculate the effects of pre-pumping mechanism on the pulse output energy. Like the model of Guohua Xiao the express we derived can be used to optimize the laser's performance.
Theoretical analysis of passively mode-locked semiconductor ring lasers

Bisheng Qin,Ruiying Zhang,Bocang Qiu,Ben Zhang,Chanchan Luo

DOI: https://doi.org/10.1364/oe.523280

IF: 3.8

2024-06-22

Optics Express

Abstract:Bisheng Qin, Ruiying Zhang, Bocang Qiu, Ben Zhang, Chanchan Luo In this paper, the theoretical analysis of the passive mode-locked semiconductor ring lasers (PML-SRLs) is investigated based on a ... [Opt. Express 32, 24358-24371 (2024)]

optics
Study on Controllable Passively Q-switched Lasers

DUAN Yu-sheng,HUO Yu-jing,HE Shu-fang

DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2008.01.045

2008-01-01

Abstract:Q-switched pulsed laser(CPQL) is a new type of pulsed laser,which has both the excellences of passively Q-switched laser and actively Q-switched laser.The laser is composite of a passively Q-switched laser with a saturable absorber placed in its cavity and a controlling LD with a focus system which is used to control the bleach degree of the absorber.The characteristics of CPQL's output,including the pulse energy,pulse width,the moment of pulse generation and repetition frequency,could be controlled through controlling LD.The principles of CPQL and experiment results are present in this paper.Comparing to passively Qswitched lasers and actively Q-switched lasers,CPQL have higher performance and will find important applications in many fields.
Low voltage driving coupled-cavity electro-optically Q-switched microchip lasers

Yunxiang Wang,Lei Huang,Mali Gong,Haitao Zhang

2008-01-01

Abstract:Coupled-cavity electro-optically Q-switched microchip lasers are integrated solid-state lasers with advantages of small size, fundamental transverse mode, single longitudinal mode, linear polarization, high repetition rate, and short pulse duration. They are ideal seed sources for high repetition rate, high beam quality MOPA systems. Experimental and theoretical study of the lasers is demonstrated. From theoretical analysis, long electric material and high end-face reflectivity lead to narrow Fabry-Pérot etalon transmission bandwidth, and low driving voltage. Two experimental setups are designed for low voltage driving. The gain medium and the electric material are Nd:YVO 4 and LiTaO 3, respectively. The cavity size is smaller than 3 mm × 3 mm × 2.5 mm. In the first setup, the output characteristics are studied through changing the length of electric material. Pulse repetition rates as high as 300 kHz is achieved with 184 mW pump power and 240 V driving voltage. The pulse width and peak power are 10 ns and 9.4 W, respectively. In the second setup, 1 MHz pulse rate is achieved in a short time period, by increasing the end-face reflectivity.
Analysis of Kinetics of a Mechanical Q-Switched CO_2 Laser with Longitudinal DC Discharge

Gao Jin-yue

Abstract:A fast chopper was used to set up a simple mechanical Q-switched CO2 laser with longitudinal DC discharge.The laser pulse with peak power 1~2 kW,repetition rate to 740 Hz,pulse width 200~300 ns,was realized.The dynamical process of Q-switching for the simple mechanical Q-switched CO2 laser was simulated by a six-temperature model.The effects of the dynamical parameters such as the dissociation of CO2 molecules,the electron density in the cavity(the discharge current) on the output laser intensity were reported.Q-switched output pulse shape,pulse peak power and pulse width were calculated.The theoretical analysis is well consistent with the experimental result.

Physics,Materials Science
LD-Pumped Passively Q-Switched Nd3+:YAG Microchip Laser and Its Stability

欧攀,闫平,巩马理,谢韬

DOI: https://doi.org/10.3321/j.issn:0253-2239.2002.12.012

2002-01-01

Abstract:CW LD-pumped Cr4+:YAG passively Q-switched Nd3+:YAG microchip laser was discussed theoretically and experimentally. The coupled rate equations were derived for passively CW pumped Q-switched microchip laser including excited state absorption (ESA). Influences of the parameters of microchip laser on pulse width (FWHM) and peak power of laser pulse were analyzed. And some efficient design principles for stable output of the microchip laser were given accordingly. With low small-signal transmission of the saturable absorber (T0=40%), experimental results showed that pulse peak power instability was achieved to be less than ±0.7%, pulse width (FWHM) instability was less than ±1.0% and the laser output peak power was more than 1 kW in the LD-pumped passively Q-switched Nd3+:YAG microchip laser.
Analysis of a Laser-Diode End-Pumped Passively Q-switched Nd:GdVO 4 Laser with V 3+ :YAG Saturable Absorber

J. Ma,Y. Li,Y. Sun,H. Qi,R. Lan,X. Hou

DOI: https://doi.org/10.1134/s1054660x09030037

IF: 1.2

2009-01-01

Laser Physics

Abstract:By considering both the transversal and longitudinal Gaussian spatial distribution of the intracavity photon density, a couple of rate equations describing a laser-diode end-pumped passively Q-switched Nd:GdVO4 laser with V3+:YAG saturable absorber have been proposed. Solving these space-dependent rate equations numerically, we obtain the dependences of pulse width, pulse repetition rate, single-pulse energy and peak power on pump power. In the experiment, a laser-diode end-pumped Nd:GdVO4 laser passively Q-switched by a V3+:YAG saturable absorber has been realized, and the experimental results are consistent with the theoretical calculations.
Optimization of an AO Q-switched Solid-State Raman Laser

Feihu Zhu,Ke Gong,Yujing Huo

DOI: https://doi.org/10.1016/j.optcom.2011.12.089

IF: 2.4

2012-01-01

Optics Communications

Abstract:An extension of the rate equation models for solid-state Raman laser is proposed and investigated with accounting for the dynamics of an acousto-optically (AO) Q-switch modulator and the effects of thermal lens provided by the pump beam. The improved model is aimed at outlining optimization strategies for wonderful laser performance with short pulse width and high peak power. A comparison between traditional intra-cavity and new couple-cavity configurations is made. The simulation results indicate that it is possible to realize an efficient sub-nanosecond coupled-cavity Raman laser by optimizing several important parameters.
COMPARISON BETWEEN THE THEORIES OF SIX-TEMPERATURE MODEL AND THE RATE EQUATION FOR Q-SWITCHED CO 2 LASER

Wang Yu-San,Li Zi-qin,Tian Zhaoshuo,Wang Qi

DOI: https://doi.org/10.7498/aps.50.2369

2001-12-20

Abstract:The theories of rate equation and six-temperature model for CO 2 lasers are used to describe the process of the dynamic emission in the electrooptically Q switched CO 2 laser. The peak power and delay time of Q switched laser calculated by the two theories are well consistent with the experiments. The calculated pulse width of Q switched laser using the theory of rate equation is narrow and the tailing is too short. However, a theoretical analysis by using the six-temperature model is consistent with the measured waveform and the tailing is obvious. In addition, the processes of energy-transfer of all kinds of molecular levels are considered in the six-temperature model. So compared to the rate equation, the six-temperature model makes a better analysis.

Mathematics,Physics
Chip-scale, CMOS-compatible, high energy passively Q-switched laser

Neetesh Singh,Jan Lorenzen,Milan Sinobad,Kai Wang,Andreas C. Liapis,Henry Frankis,Stefanie Haugg,Henry Francis,Jose Carreira,Michael Geiselmann,Mahmoud A. Gaafar,Tobias Herr,Jonathan D. B. Bradley,Zhipei Sun,Sonia M Garcia-Blanco,Franz X. Kartner

2023-03-02

Abstract:Chip-scale, high-energy optical pulse generation is becoming increasingly important as we expand activities into hard to reach areas such as space and deep ocean. Q-switching of the laser cavity is the best known technique for generating high-energy pulses, and typically such systems are in the realm of large bench-top solid-state lasers and fiber lasers, especially in the long wavelength range >1.8 um, thanks to their large energy storage capacity. However, in integrated photonics, the very property of tight mode confinement, that enables a small form factor, becomes an impediment to high energy application due to small optical mode cross-section. In this work, we demonstrate complementary metal-oxide-semiconductor (CMOS) compatible, rare-earth gain based large mode area (LMA) passively Q-switched laser in a compact footprint. We demonstrate high on-chip output pulse energy of >150 nJ in single transverse fundamental mode in the eye-safe window (1.9 um), with a slope efficiency ~ 40% in a footprint of ~9 mm2. The high energy pulse generation demonstrated in this work is comparable or in many cases exceeds Q-switched fiber lasers. This bodes well for field applications in medicine and space.

Optics
Stable 100 Khz Operation of Passively Q-switched Microchip Laser

M. Gong,Y. Wang,D. Wang,Y. Liao

DOI: https://doi.org/10.1049/el:20060496

2006-01-01

Electronics Letters

Abstract:A stable passively Q-switched Nd:YAG/Cr/sup 4+/:YAG microchip laser is presented. For repetition rates between 1 and 100 kHz, interpulse timing jitter and amplitude variation are better than /spl plusmn/1 and /spl plusmn/0.6%, respectively. It was experimentally demonstrated that multi-amplitude-pulse generation at high pulse repetition rates is due to multi-longitudinal-mode operation.
The Research of High Frequency Self-Q-switched Micro-Chip Laser

HU Miao,CHEN Jun,CHEN Guang-miao,GE Jian-hong

DOI: https://doi.org/10.3969/j.issn.1005-5630.2005.02.010

2005-01-01

Abstract:In this paper,we designed a pulse signal source whose repetition rate ranged from 10Hz to 40kHz to drive the LD.The LD output pules is of 808nm in wavelength and same repetition rate.Then we can pump the Cr~(4+),Nd~(3+)∶YAG crystal chip by the LD pulse and get got steady 1064nm sequence-pulse,also the rate ranged from 10Hz to 40kHz,and the narrowest width is 40ns.At last we compared and analyzed some problem about the sequence-pulse,got very good result.
Low repetition rate passively mode-locked semiconductor disk laser

He Liang,Peng Xue-Fang,Shen Xiao-Yu,Zhu Ren-Jiang,Wang Tao,Jiang Li-Dan,Tong Cun-Zhu,Song Yan-Rong,Zhang Peng,,,,

DOI: https://doi.org/10.7498/aps.73.20240441

IF: 0.906

2024-01-01

Acta Physica Sinica

Abstract:Semiconductor disk lasers (SDLs) have advantages of high output power and good beam quality. Its flexible external cavity provides convenience for inserting additional optical element to start mode locking and produce ultra-short pulse train with duration from picosecond to femtosecond. However, the very short lifetime of about a few nanoseconds to tens of nanosecond of the carrier in semiconductor gain medium limits the decrease of pulse repetition rate, thus restrict the increase of peak power of the mode-locked laser pulse to some extent. In this work, by using the relatively shallow In0.2GaAs quantum wells, which has a relatively long carrier lifetime in the active region of gain chip, as well as the particularly designed semiconductor saturable absorption mirror (SESAM) that with a relatively small saturation flux, a passively mode-locked SDL with low repetition rate and high peak power is demonstrated. The used six-mirror cavity has a spot radius of about 200 μm on the chip and a 40 μm spot on the SESAM, and the total cavity length is about of 1.92 m. The SESAM passively mode-locked SDL produces a stable pulses train with the lowest repetition rate of 78 MHz. When the temperature is 12°C and the transmittance of the output coupler is T = 3%, an average output power of 2.1 W and a pulse duration of 2.08 ps are achieved. The corresponding pulse peak power reaches 12.8 kW, which is about twice of the reported highest peak power in a SESAM mode-locked SDL. When T = 2% and T = 5%, the obtained average output power are 1.34 W and 1.62 W respectively, and the corresponding pulse peak power are 8.17 kW and 9.88 kW. Based on the reported literatures and the results of pulse repetition rate in our experiments, the estimated lifetime of the carriers of the In0.2GaAs quantum wells in the active region of the gain used chip is 16.4 ns. This high peak power mode-locked semiconductor disk laser has important potential applications in biomedical photonics, chemistry, and nonlinear microscopy.

physics, multidisciplinary

The optimal analysis of Siegman rate equations of passively Q-switched microchip laser

Optimization of Passively Q-switched Nd:YAG/Cr:YAG Microchip Lasers and Experiments

Rate Equation Analysis of High Speed Q-Modulated Semiconductor Laser

Pulse Control of Passively Q-Switched Microchip Laser with Cw Pumping Modulation

Theoretical Modelling of Single-Mode Lasing in Microcavity Lasers Via Optical Interference Injection.

Theoretical Analysis for Self-Q-Switched Laser Diode Pumped Solid-State Laser

Analysis of chirping characteristics of a semiconductor optical amplifier

Analytical solution for passive Q-switching with Cr-ion doped saturable absorber

Dynamics of Diode-Pumped Microchip Laser Passively Q-switched with Cr:YAG

Theoretical analysis of passively mode-locked semiconductor ring lasers

Study on Controllable Passively Q-switched Lasers

Low voltage driving coupled-cavity electro-optically Q-switched microchip lasers

Analysis of Kinetics of a Mechanical Q-Switched CO_2 Laser with Longitudinal DC Discharge

LD-Pumped Passively Q-Switched Nd3+:YAG Microchip Laser and Its Stability

Analysis of a Laser-Diode End-Pumped Passively Q-switched Nd:GdVO 4 Laser with V 3+ :YAG Saturable Absorber

Optimization of an AO Q-switched Solid-State Raman Laser

COMPARISON BETWEEN THE THEORIES OF SIX-TEMPERATURE MODEL AND THE RATE EQUATION FOR Q-SWITCHED CO 2 LASER

Chip-scale, CMOS-compatible, high energy passively Q-switched laser

Stable 100 Khz Operation of Passively Q-switched Microchip Laser

The Research of High Frequency Self-Q-switched Micro-Chip Laser

Low repetition rate passively mode-locked semiconductor disk laser