LD-Pumped Passively Q-Switched Nd3+:YAG Microchip Laser and Its Stability

欧攀,闫平,巩马理,谢韬

DOI: https://doi.org/10.3321/j.issn:0253-2239.2002.12.012

2002-01-01

Abstract:CW LD-pumped Cr4+:YAG passively Q-switched Nd3+:YAG microchip laser was discussed theoretically and experimentally. The coupled rate equations were derived for passively CW pumped Q-switched microchip laser including excited state absorption (ESA). Influences of the parameters of microchip laser on pulse width (FWHM) and peak power of laser pulse were analyzed. And some efficient design principles for stable output of the microchip laser were given accordingly. With low small-signal transmission of the saturable absorber (T0=40%), experimental results showed that pulse peak power instability was achieved to be less than ±0.7%, pulse width (FWHM) instability was less than ±1.0% and the laser output peak power was more than 1 kW in the LD-pumped passively Q-switched Nd3+:YAG microchip laser.