Properties of Bi1-xGdxNbO4 Microwave Dielectric Ceramics in N2 Sintering Atmosphere

PANG Yue,ZHONG Chao-wei,ZHANG Shu-ren

DOI: https://doi.org/10.3969/j.issn.1004-2474.2008.01.040

2008-01-01

Abstract:The Bi1-xGdxNbO4 microwave dielectric ceramics were prepared by conventional solid-state reaction method.The effects of Gd doping on the sintering and microwave dielectric properties of BiNbO4 ceramics sintered under N2 atmosphere were investigated.The difference of phase structure was not significant and all the samples exhibited the same orthorhombic phase as main phase.With the increased of Gd concentrations,sintering temperature increased,apparent density and relative dielectric constant er decreased.The Q×f values also changed with different Gd content.At a sintering temperature of 900 ℃,the Bi0.992Gd0.008NbO4 ceramics exhibited good microwave dielectric properties of er =43.6(at 4.3 GHz),Q×f =14 288 GHz(at 4.3 GHz),and τf ≈0.