Simple Synthesis and Growth Mechanism of Core/Shell CdSe/SiOxNanowires

Guozhang Dai,Shengyi Yang,Min Yan,Qiang Wan,Qinglin Zhang,Anlian Pan,Bingsuo Zou
DOI: https://doi.org/10.1155/2010/427689
IF: 3.791
2010-01-01
Journal of Nanomaterials
Abstract:Core-shell-structured CdSe/SiOxnanowires were synthesized on an equilateral triangle Si (111) substrate through a simple one-step thermal evaporation process. SEM, TEM, and XRD investigations confirmed the core-shell structure; that is, the core zone is single crystalline CdSe and the shell zone isSiOxamorphous layer and CdSe core was grown along (001) direction. Two-stage growth process was present to explain the growth mechanism of the core/shell nanwires. The silicon substrate of designed equilateral triangle providing the silicon source is the key factor to form the core-shell nanowires, which is significant for fabrication of nanowire-core sheathed with a silica system. The PL of the product studied at room temperature showed two emission bands around 715 and 560 nm, which originate from the band-band transition of CdSe cores and the amorphousSiOxshells, respectively.
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