Dielectric Enhancement in Interface-Modified BaTiO3/SrTiO3 Multilayered Films Prepared by Pulsed Laser Deposition

DZ Hu,MR Shen,WW Cao
DOI: https://doi.org/10.1016/j.mee.2005.12.007
IF: 2.3
2006-01-01
Microelectronic Engineering
Abstract:Pulsed-laser-deposited polycrystalline BaTiO"3/SrTiO"3 multilayered films on Pt/Ti/SiO"2/Si substrates have been fabricated with interfacial modification through lowering the oxygen pressure during the time interval in between two adjacent depositions. It is found that the formation of the heterolayered structure is essential to get the dielectric enhancement. Such heterolayered films have large dielectric constant of 1201 with a loss tangent below 0.1 at 10KHz. This is about two times that of the identically prepared Ba"0"."5Sr"0"."5TiO"3/Ba"0"."5Sr"0"."5TiO"3 homolayered and uniform Ba"0"."5Sr"0"."5TiO"3 films. The enhancement of dielectric properties is attributed to the presence of the interfacial regions with controllable space charges due to the formation of oxygen vacancies at lower oxygen pressure.
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