Abstract:603 Objectives Digital Silicon Photomultiplier has recently emerged as a promising photodetector for ToF PET systems. It not only addresses a number of challenges encountered by analog SiPM such as power consumption and noise susceptibility, but also provides additional benefits including low cost and possibility to monolithically integrate the single-photon avalanche photodiode (SPAD) on the same substrate with complex circuitry[1-4]. In this study, a high-resolution, ultra-low power time-to-digital converter (TDC) was implemented to push the limit of timing resolution and improve image quality[5]. Methods Our SPAD array is fabricated in 130nm CMOS technology, using an n+/p-well junction[6]. A guard ring structure is formed to suppress the premature edge breakdown[7]. An improved passive-quenching, active-reset front-end circuit is coupled to each SPAD cell to disable noisy cells. Fig.1(a) shows the layout of our 8x8 SPAD array. Our TDC employs the Vernier Gated Ring Oscillator to improve the time resolution and reduces power consumption by a gated-mode operation. Fig.1(b) gives the TDC layout. Results The prototype chip is fabricated in standard 130nm CMOS, achieving 7.3ps resolution, 11ps precision, 1.2mW power consumption and 0.03mm2 area. A rms integral nonlinearity(INL) of 1.2LSB is obtained with the help of INL look-up-table calibration. Table I compares the performance with recent relevent works. Conclusions The design and characterization of a dSiPM prototype fabricated in a 130 nm standard CMOS is reported. It comprises of an 8x8 SPAD array and a high-resolution TDC, whose compact size makes it suitable for an array configuration. For the future work, the SPAD array and TDC will be coupled to scintillation crystals to evaluate energy resolution and time resolution for ToF PET imaging. Research Support The authors gratefully acknowledge support from the Canada Research Chair program, NSERC of Canada, CFI, FedDev Ontario, NSERC ResEau strategic network, NCE IC-IMPACTS and CMC Microsystems.

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