Abstract:The nanowire gate-all-around (GAA) structures with the nearly ultimate channel electrostatic integrity of the gate field can exhibit the best immunity to the short channel effect and drain-induced barrier lowering. Moreover, owing to the enhanced control efficiency of gate over the tunneling junction, the GAA-TFET also gives improved subthreshold swing and on-state current. Despite the excellent device performance, an accurate model is very significant for the practical application. Compared with the numerical methods which are usually time consuming and computationally inefficient, an analytical model could accelerate the device investigation and circuit design process. Even though some tunneling current models have already been reported for nanowire tunneling field-effect-transistors (TFETs), the model of the terminal capacitance is still an issue for nanowire TFETs. The capacitance is of great significance for the transient simulation. In this paper, a physical and analytical potential model considering both the source depletion region and the channel mobile charges, is developed for the GAA-TFETs. The results from the model are verified with the numerical simulations, and the excellent agreement between the two results indicates the validation of the proposed model. Based on the potential model, the terminal charge model and the capacitance model are further developed and also verified by the numerical simulations. The main inflection and variation of the terminal charges and capacitances with the biases can be predicted by our model. Besides, both the model results and the numerical simulations both demonstrate that the gate charge is dominated mainly by the drain charges and the contribution of the source charges can be almost neglected. This also leads to the very small gate-source capacitance and very large Miller capacitance in the TFET device. This will be detrimental to the performance of TFET-based digital circuits but can be mitigated with the hetero-oxide gate structure. The second order effects, such as the quantum confinement and traps, are ignored in this paper and can be taken into the core model in the future work. It should also be noted that there is no iterative process involved during the model derivation, thus the developed model can be easily applied to the widely used SPICE platform and will be useful in designing and investigating the GAA-TFET based circuits.

An ambipolar virtual-source-based charge-current compact model for nanoscale graphene transistors

An Ambipolar Virtual-Source-Based Charge-Current Compact Model for Nanoscale Graphene Transistors

A unified charge-current compact model for ambipolar operation in quasi-ballistic graphene transistors: Experimental verification and circuit-analysis demonstration

Compact virtual-source current–voltage model for top-and back-gated graphene field-effect transistors

Compact Virtual-Source Current–Voltage Model for Top- and Back-Gated Graphene Field-Effect Transistors

Virtual-Source-Based Self-Consistent Current and Charge FET Models: from Ballistic to Drift-Diffusion Velocity-Saturation Operation

A Scalable Compact Model for the Static Drain Current of Graphene FETs

Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor

A Compact Model of MoS2 Field-Effect Transistors from Drift-Diffusion to Ballistic Carrier Transport Regimes

Capacitance Model for Nanowire Gate-All-around Tunneling Field-Effect-transistors

A current-voltage model for Schottky-barrier graphene based transistors

A Quasi-Ballistic Model for Short Channel Monolayer Graphene Field Effect Transistor Including Scattering Effects

Atomistic Modeling of the Electrostatic and Transport Properties of A Simplified Nanoscale Field Effect Transistor

MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping Effects.

Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

Ambipolar Transport Compact Models for Two-Dimensional Materials Based Field-Effect Transistors

Quasi-2D Compact Modeling for Double-Gate MOSFET

A Physics-Based Compact Model for MoS2 Field-Effect Transistors Considering the Band-Tail Effect and Contact Resistance

Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields

Physics Based Compact Model Of Gan Hemt With An Efficient Parameter Extraction Flow

A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors