Abstract:Polymorphism has emerged as an important design consideration in organic semiconductors (OSCs). Previously, in many OSCs, even small changes in molecular stacking can cause drastic changes to the optical and electronic properties. However, investigation into n-type semiconductors has significantly lagged behind their p-type counterparts. In this work, we present the prolific polymorphism of 2-dimensional quinoidal terthiophene (2DQTT-o-B) and systematically investigate each of 5 polymorphs, 3 of which have been previously unreported. Grazing incidence X-ray diffraction provided a key method to understanding the structure of each polymorph. Via the polymorphic transitions mapped, we tuned the electron mobility by 5 orders of magnitude, from 5.63 × 10–5 to 0.22 cm2 V−1 s–1. These were accompanied by modifications to the optical properties, namely we observed substantial differences in the refractive index noted by intensity differences under polarized optical microscopy and a large shift in optical band gap from 1.18 eV up to 1.40 eV. Finally, we suggest that changes to these properties may be related to the unique quinoidal to aromatic transition observed in quinoidal molecules.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.chemmater.0c04678?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.chemmater.0c04678</a>.Crystallographic data for 2DQTT-o-B polymorph I at 25 °C (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.0c04678/suppl_file/cm0c04678_si_001.cif">CIF</a>)Movie of I″–I transition; movie of I′–I transition; movie of I–II transition; movie of II–III transition; GIXD movie of I–II transition; GIXD movie of II–III transition (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.0c04678/suppl_file/cm0c04678_si_002.zip">ZIP</a>)Refinement details for the crystal structure; DSC showing reversibility of I–II and II–III transitions; molecular packing from single crystal structure and identification of π–π stacking plane; list of printing conditions for accessing each polymorph; devices of polymorph I″ separated by channel directions parallel and perpendicular to the printing direction; devices of I′ separated by channel directions parallel and perpendicular to the printing direction; simulated diffraction pattern of the single crystal structure unit cell overlaid with the GIXD pattern of polymorph I; simulation of diffraction peaks for each fitted unit cell; summary of parameters used in GIXD simulation; POM and GIXD images showing the alignment of polymorph I″; AFM images and line cuts showing the thickness of films printed for UV–vis; output curves of the devices presented in <a class="internalNav" href="#fig4">Figure </a><a class="internalNav" href="#fig4">4</a>; recoverability of device performance upon cooling from polymorph II; and summary of mobility and threshold voltages from the recovered devices (<a class="ext-link" href="/doi/suppl/10.1021/acs.chemmater.0c04678/suppl_file/cm0c04678_si_003.pdf">PDF</a>).This article has not yet been cited by other publications.

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