Improvement of gas-sensing performance of TO8C monolayers as high-efficient room-temperature NO and NO 2 gas sensors induced by electric field

Guodong Li,Wentao Guo,Qihua Hou,Zhiyong Liu,Xinli Li,Yongliang Yong
DOI: https://doi.org/10.1016/j.rinp.2024.107770
IF: 4.565
2024-05-19
Results in Physics
Abstract:The gas-sensing application potential of the TO8C monolayer for the target gases (NO, NO 2 , CO, CO 2 , NH 3 , CH 4 , H 2 O, and H 2 ) was systematically investigated via DFT calculations. Only NO and NO 2 adsorption can tune the electronic properties of the TO8C monolayer. Since the weak adsorption strength of NO and NO 2 is unfavorable for the sensor device, E-field modulation was applied. Except as the enhancement of adsorption strength into desired ranges for NO and NO 2 , E-field modulation of −0.14 ∼ −0.21 V/Å for NO (0.08 ∼ 0.12 V/Å and −0.26 ∼ −0.29 V/Å for NO 2 ) makes semiconducting transfer into conducting properties, indicating the sensitivity of the monolayer towards NO and NO 2 gases was also effectively improved. However, the electronic properties of TO8C monolayer adsorbed with the other gases were hardly changed by the above-mentioned E-fields. When the applied E-fields were in −0.12 ∼ −0.17 V/Å (or −0.26 ∼ −0.29 V/Å), the conducting properties for NO (or NO 2 ) adsorption were maintained in the existence of humidity, indicating that the determinate E-field is much favorable for the TO8C-based sensor to detect NO and NO 2 gases without considering whether the humidity exists. Our findings reveal that the TO8C monolayers are compelling and feasible candidates for NO and NO 2 resistance-type sensors at room temperature under the E-field modulation.
physics, multidisciplinary,materials science
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