Abstract:Semiconductor photodetectors can work only in specific material-dependent light wavelength ranges, connected with the bandgaps and absorption capabilities of the utilized semiconductors. This limitation has driven the development of hybrid devices that exceed the capabilities of individual materials. In this study, for the first time, a hybrid heterojunction photodetector based on methylammonium lead bromide (MAPbBr3) polycrystalline film deposited on gallium arsenide (GaAs) was presented, along with comprehensive morphological, structural, optical, and photoelectrical investigations. The MAPbBr3/GaAs heterojunction photodetector exhibited wide spectral responsivity, from 540 to 900 nm. The fabrication steps of the prototype device, including a new preparation recipe for the MAPbBr3 solution and spinning, will be disclosed and discussed. It will be shown that extending the soaking time and refining the precursor solution's stoichiometry may enhance surface coverage, adhesion to the GaAs, and film uniformity, as well as provide a new way to integrate MAPbBr3 on GaAs. Compared to the pristine MAPbBr3, the enhanced structural purity of the perovskite on GaAs was confirmed by X-ray Diffraction (XRD) upon optimization compared to the conventional glass substrate. Scanning Electron Microscopy (SEM) revealed the formation of microcube-like structures on the top of an otherwise continuous MAPbBr3 polycrystalline film, with increased grain size and reduced grain boundary effects pointed by Energy-Dispersive Spectroscopy (EDS) and cathodoluminescence (CL). Enhanced absorption was demonstrated in the visible range and broadened photoluminescence (PL) emission at room temperature, with traces of reduction in the orthorhombic tilting revealed by temperature-dependent PL. A reduced average carrier lifetime was reduced to 13.8 ns, revealed by time-resolved PL (TRPL). The dark current was typically around 8.8 × 10-8 A. Broad photoresponsivity between 540 and 875 nm reached a maximum of 3 mA/W and 16 mA/W, corresponding to a detectivity of 6 × 1010 and 1 × 1011 Jones at -1 V and 50 V, respectively. In case of on/off measurements, the rise and fall times were 0.40 s and 0.61 s or 0.62 s and 0.89 s for illumination, with 500 nm or 875 nm photons, respectively. A long-term stability test at room temperature in air confirmed the optical and structural stability of the proposed hybrid structure. This work provides insights into the physical mechanisms of new hybrid junctions for high-performance photodetectors.

Tuning Photodetection Band of MAPbX3(X=Cl/Br/I) Perovskite Single Crystals by Sub-nano Carbon Dot Doping

High-performance CsPbBr3-xClx/Si Heterojunction Photodetectors for Variable Wavelength Photodetection

Variational hysteresis and photoresponse behavior of MAPb<i>X</i><sub>3</sub> (<i>X</i> = I, Br, Cl) perovskite single crystals

Homologous Bromides Passivation of CH 3NH 3pbbr 3 Single Crystals for Photodetectors with Improved Properties

Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure

Extrinsic photoresponse of Ag doped MAPbBr 3 perovskite crystals

Optimized Photoelectric Characteristics of Mapbcl3 and Mapbbr3 Composite Perovskite Single Crystal Heterojunction Photodetector

Solution-processed MAPbI 3 /Cs 2 AgBiBr 6 heterostructure through epitaxial growth for broadband photo-detection

Lanthanide-Doped MAPbI 3 Single Crystals: Fabrication, Optical and Electrical Properties, and Multi-mode Photodetection

Photo-Diodes Based on CH3NH3PbCl3 Perovskite Single Crystals by Epitaxial Growth for Ultraviolet Photo-Detection

Perovskite Photodetectors Based on p-i-n Junction With Epitaxial Electron-Blocking Layers

Flexible, UV-responsive Perovskite Photodetectors with Low Driving Voltage

High-Performance Planar-Type Photodetector on (100) Facet of MAPbI 3 Single Crystal

Epitaxy growth of MAPbBrxCl3-x single-crystalline perovskite films toward spectral selective detection in both broadband and narrowband range

Photoimaging with Color-Sensing Abilities by Tuning the Band Gap of a Single-Crystal Lead-Free Perovskite

High-Performance Planar-Type Photodetector on (100) Facet of MAPbI3 Single Crystal

Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors

In Situ Solution-Grown Halide Perovskite Single Crystals with Epitaxial Heterojunction Structures for Efficient Photodetection

Hetero-integrated MoS 2 /CsPbBr 3 photodetector with enhanced performance via combinational modulation of grain boundary passivation and interfacial carrier separation

High-Performance Planar Self-Driven Visible and Near-Infrared Photodetector Based on Pb-Sn Perovskite Single Crystals

Ultralow detection limit and high sensitivity X-ray detector of high-quality MAPbBr 3 perovskite single crystals