Hole-dominated Fowler–Nordheim tunneling in 2D heterojunctions for infrared imaging

Lei Tong,Meng Peng,Peisong Wu,Xinyu Huang,Zheng Li,Zhuiri Peng,Runfeng Lin,Qiaodong Sun,Yaxi Shen,Xuefeng Zhu,Peng Wang,Jianbin Xu,Lei Ye

DOI: https://doi.org/10.1016/j.scib.2020.07.037

IF: 18.9

2021-01-01

Science Bulletin

Abstract:<p>Heterostructures based on diverse two-dimensional (2D) materials are effective for tailoring and further promoting device performance and exhibit considerable potential in photodetection. However, the problem of high-density thermionic carriers can be hardly overcome in most reported heterostructure devices based on type I and type II band alignment, which leads to an unacceptably small <em>I</em>_photo/<em>I</em>_dark and strong temperature dependence that limit the performance of photodetectors. Here, using the MoTe₂/h-BN/MoTe₂/h-BN heterostructure, we report the hole-dominated Fowler–Nordheim quantum tunneling transport in both on and off states. The state-of-the-art device operating at room temperature shows high detectivity of &gt;10⁸ Jones at a laser power density of &lt;0.3 nW μm⁻² from the visible to near infrared range. In addition, the fast on–off switching and highly sensitive photodetection properties promise superior imaging capabilities. The tunneling mechanism, in combination with other unique properties of 2D materials, is significant for novel photodetection.</p>

multidisciplinary sciences

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is the high - density thermionic carrier transport problem in the photodetection process of traditional two - dimensional - material - based photodetectors. This thermionic carrier transport will lead to a small light - to - dark current ratio (Iphoto/Idark) of the photodetector and has a strong temperature dependence, thus limiting the performance of the photodetector. To solve these problems, the authors utilized the MoTe2/h - BN/MoTe2/h - BN heterostructure and reported a hole - dominated Fowler - Nordheim (FN) quantum tunneling transport mechanism. This mechanism can be achieved in both the on - state and the off - state, which helps to reduce thermionic carrier transport and improve the performance of the photodetector, especially in low - power infrared imaging applications at room temperature.

Specifically, this research solves the above problems through the following points:
1. **Low dark current**: By taking advantage of the ultrathin characteristics of two - dimensional materials, the dark current is greatly reduced. Especially at low temperatures, the dark current can be as low as 10^-14 A.
2. **High detectivity**: At room temperature, the detectivity of this device in the visible to near - infrared range (laser power density of <0.3 nW μm^-2) exceeds 10^8 Jones.
3. **Fast response speed**: The turn - on and turn - off response times of this device are approximately 37.5 μs and 50.0 μs respectively, which are much faster than those of traditional type - I and type - II photodetectors.
4. **Weak temperature dependence**: Through the FN tunneling mechanism, the performance change of this device at different temperatures is small, which helps to achieve stable low - power photodetection in a wider temperature range.

These improvements make this device have significant advantages in low - power photodetection and high - speed imaging applications, especially in infrared - band applications.