Inverted perovskite solar cells using dimethylacridine-based dopants

Qin Tan,Zhaoning Li,Guangfu Luo,Xusheng Zhang,Bo Che,Guocong Chen,Han Gao,Dong He,Guoqiang Ma,Jiafeng Wang,Jingwei Xiu,Huqiang Yi,Tao Chen,Zhubing He

DOI: https://doi.org/10.1038/s41586-023-06207-0

IF: 64.8

2023-05-24

Nature

Abstract:Doping of perovskite semiconductor1 and passivation of its grain boundaries2 remain challenging but essential for advancing high-efficiency perovskite solar cells. Particularly, that’s crucial to build the perovskite/indium tin oxide (ITO) Schottky contact based inverted devices without pre-depositing a layer of hole-transport material3-5. Here we report a dimethylacridine-based molecular doping process to construct a well matched p-perovskite/ITO contact along with all-round passivation of grain boundaries, achieving a certified power conversion efficiency (PCE) of 25.39%. The molecules are shown to be extruded from the precursor solution to the grain boundaries and the film bottom surface in the chlorobenzene-quenched crystallization process, which we call a molecule-extrusion process. The core coordination complex between the deprotonated phosphonic acid group of the molecule and lead polyiodide of perovskite is responsible for both mechanical absorption and electronic charge transfer, and leads to p-type doping of the perovskite film. We achieve a champion device with a PCE of 25.86% (reverse scan), and devices that maintain 96.6% of the initial PCE after 1000 h light soaking.

multidisciplinary sciences

What problem does this paper attempt to address?

The paper aims to address some key issues in perovskite solar cells (PSCs), particularly the challenges faced in constructing inverted devices. Specifically:

1. **Doping and Grain Boundary Passivation of Perovskite Semiconductors**: Doping of perovskite semiconductors and passivation of their grain boundaries remain key challenges in improving the performance of high-efficiency perovskite solar cells.
2. **Construction of Inverted Devices Without Pre-deposited Hole Transport Layer (HTL)**: It is crucial to construct inverted devices with perovskite/indium tin oxide (ITO) Schottky contacts without pre-depositing hole transport materials.
3. **Improving Device Performance**: By using molecular doping techniques, the properties of perovskite films can be optimized to achieve higher power conversion efficiency (PCE).

Through these methods, researchers hope to address the issue of HTL material degradation in traditional normal-structure perovskite solar cells, simplify device structures, and reduce costs. Additionally, they aim to further enhance device stability and efficiency by comprehensively passivating grain boundaries to reduce deep-level traps.