Abstract:Hexagonal boron nitride (h-BN) has attracted significant attention due to its exceptional properties. Among various substrates used for h-BN growth, diamond emerges as a more promising substrate due to its high-temperature resistance and superior electrical properties. To reveal the nucleation mechanism of h-BN on the diamond (111) surface and the impact of hydrogenation treatment on this process, we explored the adsorption, diffusion, nucleation morphologies, and predicted nucleation pathways in this process using first-principles calculations based on density functional theory (DFT). Our results indicate that N positioned above the first layer of C and B positioned above the second layer of C enhance the stability of BN clusters. During the growth of BN clusters, there is a geometric transformation from chain-like structures to honeycomb-like structures. The proportion of unhybridized sp2 atoms within BN clusters and geometric symmetry significantly influence h-BN growth. Moreover, computational findings also suggest that to enhance the nucleation rate of h-BN it is essential to inhibit the formation of zigzag chain structures by BN clusters during the early stages of nucleation on a clean diamond surface. Additionally, hydrogenation treatment decreases the binding affinity of B and N on the substrate, facilitating atomic diffusion, and has been identified as an effective approach to facilitate nucleation. Furthermore, hydrogen-terminated diamond acts as an electron donor in the system, which profoundly affects the morphology of growing h-BN and the characteristics of the h-BN/diamond heterostructures. These conclusions are important to understanding and optimizing h-BN growth on diamond and provide a theoretical basis of the construction and application of the h-BN/diamond heterostructure.

Nucleation and growth of stacking-dependent nanopores in bilayer h -BN

Atomic-Precision Fabrication of Quasi-Full-Space Grain Boundaries in Two-Dimensional Hexagonal Boron Nitride.

Fabrication of a Freestanding Boron Nitride Single Layer and Its Defect Assignments.

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Atomic Engineering of Triangular Nanopores in Monolayer hBN: A Decoupled Seeding and Growth Approach

Fabrication of Atomically Precise Nanopores in Hexagonal Boron Nitride

Interfacial diffusion‐limited vapor‐liquid‐solid mechanism for the growth of tadpole‐shaped BN nanostructures

Embedding Ba Monolayers and Bilayers in Boron Carbide Nanowires.

Stacking fault and defects in single domain multilayered hexagonal boron nitride

Step Flow Versus Mosaic Film Growth in Hexagonal Boron Nitride

Mechanical and vibrational behaviors of bilayer hexagonal boron nitride in different stacking modes

Graphene Nanoribbons Grown in Hbn Stacks for High-Performance Electronics

In Situ Interfacial Manipulation of Metastable States Between Nucleation and Decomposition of Single Bismuth Nanoparticle

Atomistic insights into the nucleation and growth of hexagonal boron nitride and graphene heterostructures

Nucleation Mechanism of Hexagonal Boron Nitride on Diamond (111) and Its Hydrogen-Terminated Surface: A DFT Study

Unidirectional alignment and orientation pinning mechanism of h-BN nucleation on Ir(111) via reactive probe atomic force microscopy

Direct observation of layer-stacking and oriented wrinkles in multilayer hexagonal boron nitride

Creating a Nanospace under an H-Bn Cover for Adlayer Growth on Nickel(111)

From the synthesis of hBN crystals to their use as nanosheets in van der Waals heterostructures