Charge-carrier-type controlled superconducting dome in films

Xinbo Bai,Fucong Chen,Yuxin Wang,Juan Xu,Ruozhou Zhang,Mingyang Qin,Wenxin Cheng,Jinsong Zhang,Qiuyan Shi,Xu Wang,Beiyi Zhu,Jie Yuan,Qihong Chen,Jian Kang,Kun Jiang,Jiangping Hu,Yangmu Li,Kui Jin,Zhongxian Zhao
DOI: https://doi.org/10.1103/physrevmaterials.7.094801
IF: 3.98
2023-09-13
Physical Review Materials
Abstract:Modifying the normal state charge carriers and the related Fermi surface can significantly affect a material's superconducting state. The recently discovered superconducting dome as a function of chemical concentration in transition metal nitrides provides a promising platform for achieving such control. However, this effort was hindered by synthesis techniques that cannot stabilize the material's structure in the presence of a significant number of nitrogen vacancies. In this study, we employed oxygen-assisting nitrogen gas flow with radio frequency magnetron sputtering to stabilize the crystal structure of nitrogen-deficient zirconium nitride thin films and explore the impact of normal state charge carrier types on the superconducting state. Our electrical and thermoelectrical transport measurements indicate a fine-tuning of the superconducting transition temperature, Tc , through a shift from hole-type to electron-type charge carriers. Additionally, a concurrent strain release, reflected in the change of the film's crystal orientation, is observed in the process. https://doi.org/10.1103/PhysRevMaterials.7.094801 ©2023 American Physical Society
materials science, multidisciplinary
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