Abstract:Abstract Silicon carbide has recently surged as an alternative material for scalable and integrated quantum photonics, as it is a host for naturally occurring color centers within its bandgap, emitting from the UV to the IR even at telecom wavelength. Some of these color centers have been proved to be characterized by quantum properties associated with their single-photon emission and their coherent spin state control, which make them ideal for quantum technology, such as quantum communication, computation, quantum sensing, metrology and can constitute the elements of future quantum networks. Due to its outstanding electrical, mechanical, and optical properties which extend to optical nonlinear properties, silicon carbide can also supply a more amenable platform for photonics devices with respect to other wide bandgap semiconductors, being already an unsurpassed material for high power microelectronics. In this review, we will summarize the current findings on this material color centers quantum properties such as quantum emission via optical and electrical excitation, optical spin polarization and coherent spin control and manipulation. Their fabrication methods are also summarized, showing the need for on-demand and nanometric control of the color centers fabrication location in the material. Their current applications in single-photon sources, quantum sensing of strain, magnetic and electric fields, spin-photon interface are also described. Finally, the efforts in the integration of these color centers in photonics devices and their fabrication challenges are described.

A silicon carbide room-temperature single-photon source

Single-photon emitting diode in silicon carbide

Bright room temperature single photon source at telecom range in cubic silicon carbide

Bright single photon sources in lateral silicon carbide light emitting diodes

Silicon carbide single-photon sources: challenges and prospects

High Purcell Factor Generation of Indistinguishable On-Chip Single Photons

Bright and Coherent On-Chip Single Photons from a Very High Purcell Factor Photonic Crystal Cavity

An all-silicon single-photon source by unconventional photon blockade

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

Brightness and purity of a room-temperature single-photon source in the blue-green range

Engineering near infrared single photon emitters in ultrapure silicon carbide

Silicon-Nitride Platform for Narrowband Entangled Photon Generation

Silicon carbide color centers for quantum applications

Single artificial atoms in silicon emitting at telecom wavelengths

Entangled photon pair generation in an integrated SiC platform

Stable Single Photon Sources in the Near C-band Range above 400 K

Ultranarrow linewidth room-temperature single-photon source from perovskite quantum dot embedded in optical microcavity

Single-photon source based on a quantum dot emitting at cesium wavelength

On-demand Semiconductor Single-Photon Source with Near-Unity Indistinguishability

Indistinguishable photons from an artificial atom in silicon photonics

A photonic platform hosting telecom photon emitters in silicon