Intrinsic triferroicity in a two-dimensional lattice

Shiying Shen,Xilong Xu,Baibiao Huang,Liangzhi Kou,Ying Dai,Yandong Ma
DOI: https://doi.org/10.1103/physrevb.103.144101
IF: 3.7
2021-04-08
Physical Review B
Abstract:Intrinsic triferroicity is essential and highly sought for novel device applications, such as high-density multistate data storage. So far, the intrinsic triferroicity has only been discussed in three-dimensional systems. Herein on the basis of first principles, we report the intrinsic triferroicity in a two-dimensional lattice. Being exfoliatable from the layered bulk, single-layer FeO2H is shown to be an intrinsically triferroic semiconductor, presenting antiferromagnetism, ferroelasticity, and ferroelectricity simultaneously. Moreover, the directional control of its ferroelectric polarization is achievable by 90 ° reversible ferroelastic switching. In addition, single-layer FeO2H is identified to harbor in-plane piezoelectric effect. The unveiled phenomena and mechanism of triferroics in this two-dimensional system not only broaden the scientific and technological impact of triferroics but also enable a wide range of nanodevice applications.
physics, condensed matter, applied,materials science, multidisciplinary
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