Abstract:Abstractvan der Waals materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non-equilibrium configurations, for example via control of the twist angle. Such heterostructures not only combine characteristics of the individual building blocks, but can also exhibit physical properties absent in the parent compounds through interlayer interactions1. Here we report on a new family of nanometre-thick, two-dimensional (2D) ferroelectric semiconductors, where the individual constituents are well-studied non-ferroelectric monolayer transition metal dichalcogenides (TMDs), namely WSe2, MoSe2, WS2 and MoS2. By stacking two identical monolayer TMDs in parallel, we obtain electrically switchable rhombohedral-stacking configurations, with out-of-plane polarization that is flipped by in-plane sliding motion. Fabricating nearly parallel-stacked bilayers enables the visualization of moiré ferroelectric domains as well as electric field-induced domain wall motion with piezoelectric force microscopy. Furthermore, by using a nearby graphene electronic sensor in a ferroelectric field transistor geometry, we quantify the ferroelectric built-in interlayer potential, in good agreement with first-principles calculations. The new semiconducting ferroelectric properties of these four new TMDs opens up the possibility of studying the interplay between ferroelectricity and their rich electric and optical properties2–5.

Semiconducting triferroic multiferroics in van der Waals bilayer lattice

Intrinsic ferromagnetic triferroicity in bilayer T′-VTe2

Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides

Realization of semiconducting layered multiferroic heterojunctions via asymmetrical magnetoelectric coupling

Electron engineering of metallic multiferroic polarons in epitaxial BaTiO 3

Two-dimensional multiferroic semiconductors with coexisting ferroelectricity and ferromagnetism

Enabling Room-Temperature Triferroic Coupling in Dual Transition-Metal Dichalcogenide Monolayers Via Electronic Asymmetry

LaBr 2 bilayer multiferroic moiré superlattice with robust magnetoelectric coupling and magnetic bimerons

Artificial Multiferroics and Enhanced Magnetoelectric Effect in van der Waals Heterostructures

Prediction Of Intrinsic Ferromagnetic Ferroelectricity In A Transition-Metal Halide Monolayer

Intrinsic triferroicity in a two-dimensional lattice

Coexisting Magnetism, Ferroelectric, and Ferrovalley Multiferroic in Stacking-Dependent Two-Dimensional Materials

Antiferromagnetic ferroelastic multiferroics in single-layer VOX (X = Cl, Br) predicted from first-principles

Nonvolatile Electric Field Control of Magnetism in Bilayer CrI3 on Monolayer In2Se3

Two-dimensional multiferroics in a breathing kagome lattice

The Electronic and Magnetic Properties Modulated by Ferroelectric Polarization Switching in Two-Dimensional VSeTe/Sc2CO2 Van Der Waals Heterostructures.

Discovery of Intrinsic Ferromagnetic Ferroelectricity in Transition Metal Halides Monolayer

Exploitation of mixed-valency chemistry for designing a monolayer with double ferroelectricity and triferroic couplings

Coexistence of ferroelectricity and antiferroelectricity in 2D van der Waals multiferroic

Intertwined ferroelectricity and topological state in two-dimensional multilayer

The Effect of Switchable Electronic Polarization States on the Electronic Properties of Two-dimensional Multiferroic TMBr2/Ga2SSe2 (TM=V-Ni) Heterostructures