Abstract:The burgeoning interest in non-classical MOSFET devices for low power applications and their latest incorporation in the newer technology node necessitate a study of Negative Capacitance Field Effect Transistors (NCFETs) in Radio Frequency applications. This work explores the comparative analysis of RF/analog performance of single gate NCFET (SG-NCFET) and highly doped double pocket double gate NCFET (HDDP-DG-NCFET) using performance parameters such as cut-off frequency ( f T ), transconductance frequency product (TFP) and transconductance generation factor (TGF). The Metal Ferroelectric Insulator Semiconductor based HDDP-DG-NCFET excels SG-NCFET in terms of enhanced performance in TGF and TFP. In addition, several important distortion parameters, such as intermodulation distortion and linearity, are also investigated for these devices. The behavior of distortion and linearity indices such as g m2 , g m3 (higher-order transconductance), IIP 3 (3rd order power-intercept point), higher order voltage intercept points (VIP 2 and VIP 3 ), 1 dB compression point, and total harmonic distortion is analyzed, which shows that HDDP-DG-NCFET exhibits distortion less performance. The influence of ferroelectric thicknesses and temperature on the RF/analog and linearity performance are also explored and described. The HDDP-DG-NCFET exhibits an ON current of 2.1 × 10 −3 A/ m, current switching ratio of 0.79 × 10 10 , g m of 18.9 mS, f T of 2.65 THz, TFP of 64 THz/V, which is 55.56%, 111.27 times, 134.79%, 55.88%, 255.56%, respectively higher than SG-NCFET device. In addition, the subthreshold swing and OFF current of HDDP-DG-NCFET are 25.5 mV/decade and 2.65 × 10 −13 A/ m, which is lesser than SG-NCFET. Moreover, it is witnessed that as the temperature rises from 250 to 400 K, RF/analog metrics are worsened while the linearity performance parameters are enhanced. Furthermore, it is observed that the proposed HDDP-DG-NCFET is linear compared to SG-NCFET with a lower magnitude of higher-order harmonics. Finally, these findings reveal that at lower voltages, HDDP-DG-NCFET outperforms SG-NCFET, evincing potential use of the same in RF applications.

RF/Analog Performance Optimization and Assessing Linearity/Distortion FoMs of HDDP-DG-NCFET for Terahertz Applications

Improved analog and AC performance for high frequency linearity based applications using gate-stack dual metal (DM) nanowire (NW) FET (4H-SiC)

Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET

Exploration of Temperature Stability of linearity and RF Performance Metrics for PGP Negative Capacitance FET

Dual material gate doping-less tunnel FET with hetero gate dielectric for enhancement of analog/RF performance

Negative-to-Positive Differential Resistance Transition in Ferroelectric FET: Physical Insight and Utilization in Analog Circuits

Arbitrary Alloy Semiconductor Material Based DG MOSFET for High-Frequency Industrial and Hybrid Consumer Applications

Charge Plasma Dopingless Device: Boosting High-Frequency Performance with Germanium and Hetero Dielectric Gate

Performance Analysis of III-V and IV Semiconductors Based Double Gate Hetero Material Negative Capacitance TFET

Impact of back gate-drain overlap on DC and analog/HF performance of a ferroelectric negative capacitance double gate TFET

Performance Considerations of Thin Ferroelectrics (~10 nm HfO2, ~20 nm PZT) FDSOI NCFETs for Digital Circuits at Reduced Power Consumption

Optimization of Dual Material Based Dielectric Modulated Heterojunction Double Gate Tunnel FETs with Noise Reduction Analysis for High Frequency Applications

Analysis of Using Negative Capacitance FETs to Optimize Linearity Performance for Voltage Reference Generators

Circuit Level Implementation of Negative Capacitance Source Pocket Double Gate Tunnel FET for Low Power Applications

Analysis of III-V material-based dual source T-channel junction-less TFET with metal implant for improved DC and RF performance

Synergistic Effect of Ferroelectric and HfO2/SiO2 Hetero dielectrics in Junctionless FET for Analog and RF Applications

Investigation of negative differential resistance on negative capacitance Germanium source vertical TFET

Device design and optimization of CNTFETs for high-frequency applications

RF and linearity analysis of gate engineered dual heterojunction charge plasma TFET with improved ambipolarity

Investigation on electrical parameters between single and double material gate nanoribbon FETs including trap distributions

Design, simulation and analog/RF performance evaluation of a hetero-stacked source dual metal T-shaped gate tunnel-FET in thermally variable environments