Abstract:An ingenious phototransistor based on WSe2/WS2/WSe2 dual‐van der Waals heterostructures is constructed, performing both high responsivity, light on/off ratio and detectivity in the charge neutrality point. This high performance is ascribed to the distinctive device design, which not only facilitates the separation of photogenerated carriers but also produces a strong photogating effect. The excellent semiconducting properties and ultrathin morphological characteristics allow van der Waals (vdW) heterostructures based on 2D materials to be promising channel materials for the next‐generation optoelectronic devices, especially in photodetectors. Although various 2D heterostructure‐based photodetectors have been developed, the unavoidable trade‐off between responsivity and detectivity remains a critical issue for these devices. Here, an ingenious phototransistor based on WSe2/WS2/WSe2 dual‐vdW heterostructures is constructed, performing both high responsivity and detectivity. In the charge neutrality point (gate voltage of −15 V and bias voltage of 1 V), this device demonstrates a pronounced photosensitivity, accompanying with high detectivity of 1.9 × 1014 Jones, high responsivity of 35.4 A W−1, and fast rise/fall time of 3.2/2.5 ms at 405 nm with power density of 60 μW cm−2. Density functional theory calculations, energy band profiles, and optoelectronic characteristics jointly verify that the high performance is ascribed to the distinctive device design, which not only facilitates the separation of photogenerated carriers but also produces a strong photogating effect. As a feasible application, an automotive radar system is demonstrated, proving that the device has considerable potential for application in vehicle intelligent assisted driving.

Suppression of Persistent Photoconductivity of Rubrene Crystals using Gate‐Tunable Rubrene/Bi 2 Se 3 Diodes with Photoinduced Negative Differential Resistance

Suppression of Persistent Photoconductivity of Rubrene Crystals Using Gate-Tunable Rubrene/Bi2 Se3 Diodes with Photoinduced Negative Differential Resistance.

Highly Sensitive and Ultrafast Organic Phototransistor Based on Rubrene Single Crystals.

Highly efficient rubrene-graphene charge transfer interfaces as phototransistors in the visible regime

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Ultrafast and Stable Organic Single‐Crystal Vertical Phototransistor for Self‐Powered Photodetection and High‐Speed Imaging

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Giant Negative Photoresponse in Van Der Waals Graphene/AgBiP2Se6/Graphene Trilayer Heterostructures

Negative Photoconductance in Van Der Waals Heterostructure-Based Floating Gate Phototransistor

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Photodetection Enhancement of PdSe2/ReSe2 Van der Waals Heterostructure Field‐Effect Transistors: A Density Functional Theory‐Guided Approach

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Fast response organic photodetectors with high detectivity based on rubrene and C60

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Rational Design of WSe2/WS2/WSe2 Dual Junction Phototransistor Incorporating High Responsivity and Detectivity

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