Abstract:The negative thermal expansion (NTE) materials, which can act as thermal-expansion compensators to counteract the positive thermal expansion, have great applications merit in precision engineering. However, the exploration of NTE behavior with a wide temperature range has reached its upper ceiling through traditional doping strategies due to composition limitations. The unique sluggish characteristic in phase transition and extended optimization space in recent high entropy systems has great potential to broaden the temperature range in electronic transitions-induced NTE materials. Mn-based anti-perovskites offer an ideal platform for the exploration of high entropy NTE material due to their abundant element selection and controllable NTE performance. In this paper, the high entropy strategy is first introduced to broaden the NTE temperature range by relaxing the abrupt phase transition in Mn-based anti-perovskite nitride. We propose an empirical screening method to synthesize the high-entropy anti-perovskite (HEAP). it is found that magnetic phase separation from anti-ferromagnetic CII to paramagnetic CI surviving in an ultra-wide temperature range of 5K<=T<=350K (Delta_T=345K), revealing a unique sluggish characteristic. Consequently, a remarkable NTE behavior (up to Delta_T=235K, 5K<=T<=240K) with a coefficient of thermal expansion of -4.7x10-6/K, has been obtained in HEAP. It is worth noting that the temperature range is two/three times wider than that of low-entropy systems. The sluggish characteristic has been further experimentally proved to come from disturbed phase transition dynamics due to distortion in atomic spacing and chemical environmental fluctuation observed by the spherical aberration-corrected electron microscope. Our demonstration provides a unique paradigm for broadening the temperature range of NTE materials induced by phase transition through entropy engineering.

Entropy driven reverse-metal-to-insulator transition and delta-temperatural transports in metastable perovskites of correlated rare-earth nickelate

Heterointerface Engineered Electronic and Magnetic Phases of NdNiO 3 Thin Films

Pure Electronic Metal-Insulator Transition at the Interface of Complex Oxides

Extending the metal to insulator transitions of rare‐earth nickelates towards low temperature ranges

Electronic and magnetic stability in correlated transportations of rare-earth nickelate perovskites

Verwey transition as evolution from electronic nematicity to trimerons via electron-phonon coupling

Manipulating metal-to-insulator transition temperature in manganite–titanate junction by reverse electrical bias

Displacive Phase Transitions in Infinite-Layer Nickelates from First- and Second-Principles Calculations

Origin of Metal-Insulator Transitions in Correlated Perovskite Metals

Pressure Induced Unstable Electronic States upon Correlated Nickelates Metastable Perovskites as Batch Synthesized via Heterogeneous Nucleation

Metal-to-insulator transitions in 3d-band correlated oxides containing Fe compositions

Tunable Metal-Insulator Transition in Nd1−xYxNiO3 (x = 0.3, 0.4) Perovskites Thin Film at Near Room Temperature

Phase Diagram of Infinite-layer Nickelate Compounds from First- and Second-principles Calculations

Anomalous electron transport in epitaxial NdNiO$_3$ films

Electronically Amplified Electron-Phonon Interaction and Metal-Insulator Transition in Perovskite Nickelates

Sr-Doping-Modulated Metal-Insulator Transition in NdNiO 3 Epitaxial Films

High-Entropy Enhanced Negative Thermal Expansion Perfomance in Antiperovkites

Structurally Triggered Metal-Insulator Transition in Rare-Earth Nickelates

Temperature-sensing array using the metal-to-insulator transition of NdxSm1−xNiO3

Hydrogen induced electronic transition within correlated perovskite nickelates with heavy rare-earth composition

AC-frequency switchable correlated transports in rare-earth perovskite nickelates