Computational study of intrinsic defects on the electronic properties and quantum capacitance of Sc2CF2 monolayer

Xing-Hao Cui,Xiao-Hong Li,Rui-Zhou Zhang,Hong-Ling Cui,Hai-Tao Yan
DOI: https://doi.org/10.1016/j.surfin.2022.102193
IF: 6.2
2022-10-01
Surfaces and Interfaces
Abstract:Defects are unavoidable in the synthesis of the materials and usually play the important role in tailoring the properties of two-dimensional materials. In this paper, the electronic properties and quantum capacitance of Sc2CF2 MXene with intrinsic defect are investigated theoretically. Sc2CF2-dSc→C is energetically more favorable than other systems. Pristine Sc2CF2 is an indirect semiconductor. Sc2CF2-dC→F, Sc2CF2-dC→Sc, Sc2CF2-dF→Sc, and Sc2CF2-dSc→C undergo the semiconductor-metal transition due to the introduction of intrinsic defect. The appearance of defect energy level results in the direct bandgap of 0.2 eV for Sc2CF2-dSc→F and spin-polarized semiconductor for Sc2CF2-dF→C. Sc2CF2 and Sc2CF2-dF→C monolayers are potential cathode materials in aqueous system, while Sc2CF2-dC→F, Sc2CF2-dC→Sc, Sc2CF2-dF→Sc, Sc2CF2-dSc→C, and Sc2CF2-dSc→F monolayers are suitable for anode materials, especially for Sc2CF2-dF→Sc. The extension of voltage does not change the electrode type of the systems except Sc2CF2-dSc→F monolayer. The work function and Bader charge are further analyzed.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
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