Abstract:Light-stimulated artificial synapse shows broad application prospects in the field of neuromorphic computing. Implementation of an all-inorganic solid oxide phototransistor will be compatible with future development by providing devices with good stability and large-scale production requirements. Here, an all-inorganic light-stimulated In2O3/AlLiO thin film transistor is fabricated by a fully aqueous solution, whose threshold voltage and subthreshold swing are about 0.47 V and 0.25 V/decade, respectively. The devices can respond to optical signals and successfully simulate some important synaptic characteristics, including the transition from short-term memory to long-term memory. Under the condition of different light intensities, Pavlov's experiment is simulated to study the behavior of brain-like associative learning. In addition, this work emulates the behavior of photonic potentiation and electric depression, which can realize the erasure of optical information storage through electrical signals and maintain good erasable repeatability. More significantly, a simple fabrication of an In2O3/AlLiO all-inorganic synapse transistor can provide an effective strategy for the artificial synapses driven by optical signals.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00474?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00474</a>.Comparison of characteristics of artificial synapses based on oxide transistors; mechanisms of photoresponse in the In2O3/AlLiO TFT device; the relationship between EPSC and pulse width; effects of light intensity changes on EPSC under multiple pulses; schematic diagram of multiple pulse trainings to achieve the change from STM to LTM; optical responses at different light wavelengths; schematic diagram of two UV lights with different intensities acting on the TFT; and the erasure experiments of the TFT (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00474/suppl_file/el0c00474_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Long‐ and Short‐Term Memory Characteristics Controlled by Electrical and Optical Stimulations in InZnO‐Based Synaptic Device for Reservoir Computing

Pulsed Laser Deposition of a Ga2O3 Thin Film for an Optoelectronic Synaptic Device.

IGZO/SnOx-based dynamic memristor with fading memory effect for reservoir computing

Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite.

Synaptic Properties and Short‐Term Memory Dynamics of TiO2/WOx Heterojunction Memristor for Reservoir Computing

ZnO photoconductive synaptic devices for neuromorphic computing

Short-Term Memory to Long-Term Memory Transition Mimicked in IZO Homojunction Synaptic Transistors

Oxygen Vacancy-Induced Synaptic Plasticity in InAlZnO Nanofiber Transistors for Low-Power Neuromorphic Electronics

Optoelectronic Artificial Synaptic Device Based on Amorphous InAlZnO Films for Learning Simulations

IGZO Nanofiber Photoelectric Neuromorphic Transistors with Indium Ratio Tuned Synaptic Plasticity

InGaZnO-based Photoelectric Synaptic Devices for Neuromorphic Computing

Photo-synaptic Memristor Devices from Solution-processed Ga2O3 Thin Films

Implementation of Artificial Synapse Using IGZO-Based Resistive Switching Device

Neuromorphic Memristor Based on Amorphous InAlZnO Film for Synaptic Behavior Simulation

A Light-Stimulated Synaptic Transistor with Synaptic Plasticity and Memory Functions Based on InGaZnOx–Al2O3 Thin Film Structure

Flexible Femtojoule Energy-Consumption In-Ga-Zn-O Synaptic Transistors with Extensively Tunable Memory Time

Flexible transparent InZnO synapse transistor based on Li1.3Al0.3Ti0.7(PO4)3/polyvinyl pyrrolidone nanocomposites electrolyte film for neuromorphic computing

Li‐Ion Doping As a Strategy to Modulate the Electrical‐Double‐Layer for Improved Memory and Learning Behavior of Synapse Transistor Based on Fully Aqueous‐Solution‐Processed In2O3/AlLiO Film

Light-Stimulated Artificial Synapse with Memory and Learning Functions by Utilizing an Aqueous Solution-Processed In 2 O 3 /AlLiO Thin-Film Transistor

Synaptic Plasticity and Classical Conditioning Mimicked in Single Indium-Tungsten-oxide Based Neuromorphic Transistor

A Violet‐Light‐Responsive ReRAM Based on Zn2SnO4/Ga2O3 Heterojunction as an Artificial Synapse for Visual Sensory and In‐Memory Computing