Abstract:ABSTRACT Transparent conducting oxides (TCOs) from the semiconductor family have garnered considerable interest due to the growing popularity of optoelectronic and thermodynamical applications. Our present study has presented findings on the electronic, optical, and thermodynamic characteristics of spinel oxide MnGa 2 P 3 H 4 NO 14 ; using density functional theory (DFT), we utilized first‐principles calculations carried out with the Wien 2 k software package. The calculations were performed using the generalized‐gradient‐approximation plus Hubbard potential U (GGA+U) method for the doped materials. The band structure calculation reveals that the parent compound exhibits a semiconducting nature and a direct band gap of 2.9 and 1.7 eV for spin‐up and down channels, respectively. The stability of the material is assessed by evaluating its formation energies, which reveal that spinel oxide exhibits the highest stability. The thermodynamic properties are determined using the quasiharmonic Debye model, implemented in the GIBBS 2 code. Furthermore, the quasiharmonic Debye model examines the pressure and temperature dependence of all parameters related to the investigated spinel oxides. In order to evaluate the effectiveness of the radiation shielding, we computed the mass attenuation coefficient for the XCOM program that was investigated from the sample. In addition, linear attenuation, half‐value layer, and mean free path values have been evaluated. A thorough investigation into the dielectric function's optical characteristics was conducted. It has been found that the dielectric function exhibits a wide range of energy transparency. The discovery of UV‐absorbing materials with extremely narrow band gaps suggests their potential use in optoelectronic and solar cell applications. These results provide solid proof and motivation for seeking cutting‐edge optoelectronic materials and technology.

Modulation effect of low-electronegativity non-metallic elements on the electronic structure of group-IVB transition metal oxides

Anisotropic Lattice Thermal Conductivity In Topological Semimetal Zrgex (X = S, Se, Te): A First-Principles Study

The effect of electronic orbital interactions on p-type doping tendency in ZnO series: First-principles calculations

Tunable electronic properties of two-dimensional transition metal dichalcogenide alloys: A first-principles prediction

Metal-insulator transition in organic ion intercalated VSe<sub>2</sub> induced by dimensional crossover

Study of Composition-Modulated Interband Transitions Characteristic and Charge Dynamics Response of High-Throughput Fese1-Xtex Combinatorial Film

Tunable Electronic and Magnetic Properties of 3d Transition Metal Atom-Intercalated Transition Metal Dichalcogenides: A Density Functional Theory Study

The Combined Effects of an External Field and Novel Functional Groups on the Structural and Electronic Properties of TMDs/Ti3C2 Heterostructures: A First-Principles Study

Ferromagnetism in Transition-Metal-Doped Ii-Vi Compounds

Effects of p-type conductive properties of triaxial strain-regulated ZnO (S, Se, Te) system

Mottness Collapse in 1T-Tas2-xsex Transition- Metal Dichalcogenide: an Interplay Between Localized and Itinerant Orbitals

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Perspective on the band structure engineering and doping control of transparent conducting materials

Over 1.1 Ev Workfunction Tuning of Cesium Intercalated Metal Oxides for Functioning As Both Electron and Hole Transport Layers in Organic Optoelectronic Devices

Low Hole Effective Mass p-type Transparent Conducting Oxides: Identification and Design Principles

Investigation of the Optoelectronic, γ‐Attenuation, and Thermodynamic Properties of Novel MnGa2P3H4NO14 for Energy Applications: A DFT Study

The role of Anderson's rule in determining electronic, optical and transport properties of transition metal dichalcogenide heterostructures.

Insights on the electronic structure of Tin (II) pyrochlore oxides with 5s2 lone pair states as transparent p-type oxide semiconductors

Fine electron and phonon transports manipulation by Mn compensation for high thermoelectric performance of Sb2Te3(SnTe)n materials

First-principles study of the structure, electronic and optical properties of monolayer ZrX3 (X = S, Se, Te)

Tuning the critical Li intercalation concentrations for MoX$_2$ bilayer phase transitions