Boosting photocatalytic hydrogen peroxide production by regulating electronic configuration of single Sb atoms via carbon vacancies in carbon nitrides

Qinye He,Jie Ding,Hsin-Jung Tsai,Yuhang Liu,Min Wei,Qiao Zhang,Zhiming Wei,Zhaoyang Chen,Jian Huang,Sung-Fu Hung,Hongbin Yang,Yueming Zhai
DOI: https://doi.org/10.1016/j.jcis.2023.07.168
IF: 9.9
2023-08-03
Journal of Colloid and Interface Science
Abstract:Single-atom catalysts supported on semiconductors can serve as active sites for efficient oxygen reduction to hydrogen peroxide (H 2 O 2 ). However, researchers have long been puzzled by the lack of guidance on optimizing the performance of single-atom photocatalysts. In this study, we propose a versatile strategy that utilizes carbon vacancies to regulate the electronic configuration of antimony (Sb) atoms on carbon nitrides (C 3 N 4 ). This strategy has been found to significantly enhance the photocatalytic production of H 2 O 2 . The H 2 O 2 evolution rate of Sb single-atom on carbon vacancy-rich C 3 N 4 (designated as Sb 1 /Cv-C 3 N 4 ) is 5.369 mmol g -1 h −1 , which is 10.9 times higher than C 3 N 4 alone. By combining experimental characterizations and density functional theory simulations, we reveal the strong electronic interaction between Sb atoms and carbon vacancy-rich C 3 N 4 . This interaction is capable for maintaining the electron-rich state of Sb atoms, facilitating efficient electron transfer to pauling-type absorbed oxygen, and ultimately enhancing the formation of *OOH intermediates. This innovative defect-engineering approach can manipulate the electronic configuration of single-atom catalysts, providing a new avenue to boost the photocatalytic oxygen reduction reaction towards H 2 O 2 production.
chemistry, physical
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