A new strategy to optimize the energy storage performance of the amorphous Sr0.925Bi0.05TiO3-based thin films by regulating the BiMg0.5Ti0.5O3 concentration

Zhou Li,Chen Shijing,Huang Biao,Gong Yueqiu
DOI: https://doi.org/10.1007/s10854-024-12721-2
2024-05-22
Journal of Materials Science Materials in Electronics
Abstract:Low-temperature amorphous thin films with excellent energy storage properties play a crucial role in silicon-based microelectronic applications. The (1- x )Sr 0.925 Bi 0.05 TiO 3 - x BiMg 0.5 Ti 0.5 O 3 (SBT-BMT) ( x = 0, 0.1, 0.2, 0.3) amorphous films were prepared on Pt/Ti/SiO 2 /Si substrates by chemical solution deposition in order to achieve high energy storage performance. The X-ray diffractometer results show that amorphous films were successfully fabricated. The addition of BMT can results in a reduction of the crystallization temperature for the SBT film, and this can be used to obtain an critical amorphous state for the 0.9SBT-0.1BMT film, where the dielectric constant increases significantly and the leakage current is the minimum. The final 0.9SBT-0.1BMT film exhibited a recoverable energy storage density of 32 J/cm 3 and an energy storage efficiency of 78% at an electric field of 4097 kV/cm. Furthermore, the energy storage performance remained stable over the temperature range of 20 ~ 200 °C, the frequency range of 2 ~ 10 kHz, and even after 10 7 electrical cycles. It is expected to provide new strategy to optimize the energy storage performance of dielectric capacitors.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
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