Three-dimensional nanolithography guided by DNA modular epitaxy

Jie Shen,Wei Sun,Di Liu,Thomas Schaus,Peng Yin

DOI: https://doi.org/10.1038/s41563-021-00930-7

IF: 41.2

2021-04-12

Nature Materials

Abstract:Lithographic scaling of periodic three-dimensional patterns is critical for advancing scalable nanomanufacturing. Current state-of-the-art quadruple patterning or extreme-ultraviolet lithography produce a line pitch down to around 30 nm, which might be further scaled to sub-20 nm through complex post-fabrication processes. Herein, we report the use of three-dimensional (3D) DNA nanostructures to scale the line pitch down to 16.2 nm, around 50% smaller than state-of-the-art results. We use a DNA modular epitaxy approach to fabricate 3D DNA masks with prescribed structural parameters (geometry, pitch and critical dimensions) along a designer assembly pathway. Single-run reactive ion etching then transfers the DNA patterns to a Si substrate at a lateral critical dimension of 7 nm and a vertical critical dimension of 2 nm. The nanolithography guided by DNA modular epitaxy achieves a smaller pitch than the projected values for advanced technology nodes in field-effect transistors, and provides a potential complement to the existing lithographic tools for advanced 3D nanomanufacturing.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the limitations of current nanofabrication techniques in the fabrication of three - dimensional nanostructures, especially the limitations in terms of line pitch and critical dimension (CD). Specifically, the minimum line pitch that can be achieved by the existing quadruple patterning or multi - patterning techniques and extreme - ultraviolet lithography (EUV) technology is approximately 30 nanometers, and to further reduce it to below 20 nanometers requires complex post - processing techniques. In addition, these methods also face the challenge of overlay control in the fabrication of multi - layer three - dimensional nanostructures.

To solve these problems, researchers have proposed a three - dimensional nanolithography technique based on DNA modular epitaxy. This method uses designed single - stranded DNA (ssDNA) components to self - assemble into complex three - dimensional DNA nanostructures, which can be used as masks for reactive ion etching (RIE) to directly etch nanostructures with ultra - small line pitch and critical dimension on a silicon substrate. Through this method, the researchers have successfully reduced the line pitch to 16.2 nanometers and the critical dimension to 7.2 nanometers, which is approximately 50% smaller than the projected value of field - effect transistors (FETs) at the existing technology nodes.

In addition, this technique can also achieve single - step etching of multi - layer three - dimensional silicon nanostructures, with a vertical critical dimension of 2 nanometers, providing new tools and methods for future ultra - scaled three - dimensional nanofabrication. This achievement not only demonstrates the potential of DNA nanotechnology in high - precision nanofabrication, but also makes it possible to miniaturize and increase the integration of future electronic devices.