Abstract:The point-contact high-purity germanium detector (HPGe) has the advantages of low background, low energy threshold, and high energy resolution and can be applied in the detection of rare-event physics. However, the performance of HPGe must be further improved to achieve superior energy resolution, low noise, and long-term reliability. In this study, we combine computational simulations and experimental comparisons to deeply understand the passivation mechanism of Ge. The surface passivation effect is calculated and inferred from the band structure and density of interface states, and further confirmed by the minority carrier lifetime. The first-principles method based on the density functional theory was adopted to systematically study the lattice structure, band structure, and density of state (DOS) of four different systems: Ge–H, Ge–Ge-NH2, Ge-OH, and Ge-SiOx. The electronic characteristics of the Ge (100) unit cell with different passivation groups and Si/O atomic ratios were compared. This shows that H, N, and O atoms can effectively reduce the surface DOS of the Ge atoms. The passivation effect of the SiOx group varied with increasing O atoms and Si/O atomic ratios. Experimentally, SiO and SiO2 passivation films were fabricated by electron beam evaporation on a Ge substrate, and the valence state of Si and resistivity was measured to characterize the film. The minority carrier lifetime of Ge-SiO2 is 21.3 μs, which is approximately quadruple that of Ge-SiO. The passivation effect and mechanism are discussed in terms of hopping conduction and surface defect density. This study builds a relationship between the passivation effect and different termination groups, and provides technical support for the potential passivation layer, which can be applied in Ge detectors with ultralow energy thresholds and especially in HPGe for rare-event physics detection experiments in future.

Investigation of Amorphous Germanium Contact Properties with Planar Detectors Made from Home-Grown Germanium Crystals

Fabrication and characterization of high-purity germanium detectors with amorphous germanium contacts

Characterization of high-purity germanium (Ge) crystals for developing novel Ge detectors

Characterization of high-purity germanium detectors with amorphous germanium contacts in cryogenic liquids

Investigating Influential Parameters for High-Purity Germanium Crystal Growth

Optimization of Amorphous Germanium Electrical Contacts and Surface Coatings on High Purity Germanium Radiation Detectors

Exploring Charge Transport Dynamics in a Cryogenic P-Type Germanium Detector

A prototype segmented planar high purity germanium detector using wraparound lithium diffusion electrode and amorphous germanium blocking contact

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

On the Formation of Solid State Crystallized Intrinsic Polycrystalline Germanium Thin Films

Near-field effect in the infrared range through periodic Germanium subwavelength arrays.

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

A View of the Present Status and Future Prospecis of High Purity Germanium

Development of Large‐Diameter and Very High Purity Ge Crystal Growth Technology for Devices

Germanium lead alloy on insulator grown by rapid melting growth

Study on the Performance of HgI2 Semiconductor Detectors

Analyzing the Surface Passivity Effect of Germanium Oxynitride: a Comprehensive Approach Through First Principles Simulation and Interface State Density

Evaluation of the passivation effect and the first-principles calculation on surface termination of germanium detector

Selective Epitaxy of Germanium on silicon for the fabrication of CMOS compatible short-wavelength infrared photodetectors

Technology development of high purity germanium crystals for radiation detectors