Current-Dependent Resistance in TES Wiring Superimposed Nb Striplines

Lorenzo Ferrari Barusso,Edvige Celasco,Giovanni Gallucci,Daniele Grosso,Luca Repetto,Manuela Rigano,Matteo D’Andrea,Claudio Macculi,Guido Torrioli,Flavio Gatti

DOI: https://doi.org/10.1007/s10909-024-03068-3

2024-03-20

Journal of Low Temperature Physics

Abstract:During the characterization of the demonstration model of the Cryogenic AntiCoincidence (CryoAC) Detector (ACS-10), a current-dependent parasitic resistance was found in series with the TES network on board the detector. Analysis was possible because the resistance rises for currents above 11 A, and is therefore not observed at low bias excitation. A comparison of measurements of the TES across its Nb wiring at different temperatures suggested that the source of resistance was in the wiring and not in the TES network. After several analysis of the wiring fabrication steps, FIB-FE-SEM studies of film sections and tests of niobium film quality, we understood that the parasitic resistance was due to point contact in the Nb step coverage caused by film cracks. The fracture was due to the wall steepness and thickness of the films, since rapid step coverage is less mechanically stable and the stress on the films is proportional to the fourth power of the thickness. Therefore, all thicknesses in the wiring were reduced to the minimum optimum step coverage values and the first negative lithography parameters were optimized to reduce the wall film angle. The samples after this optimization showed no current-dependent series resistance to TES.

physics, condensed matter, applied

What problem does this paper attempt to address?

This paper attempts to address the issue of temperature-dependent parasitic resistance found in the CryoAC demonstrator model (ACS-10). Specifically, the research team discovered a current-dependent parasitic resistance in the TES network of the detector when characterizing ACS-10, which became apparent at currents exceeding 11 μA. This parasitic resistance not only increased power dissipation at low temperatures but also degraded the detector's performance.

### Main Issues:
1. **Discovery of Parasitic Resistance**: The parasitic resistance in the detector became noticeable at currents exceeding 11 μA.
2. **Identification of Resistance Source**: Measurements at different temperatures and microscopic analysis determined that the parasitic resistance originated from point contacts in the niobium (Nb) wiring, rather than the TES network itself.
3. **Cause Analysis**: Further analysis indicated that the parasitic resistance was due to film cracks caused by mechanical instability, which resulted from film thickness and wall steepness.
4. **Solution**: By optimizing the wiring fabrication process, reducing film thickness, and adjusting lithography parameters, the parasitic resistance was ultimately eliminated.

### Solutions:
- **Reduce Film Thickness**: Minimize the thickness of all wiring layers to the optimal value to reduce mechanical stress.
- **Optimize Lithography Parameters**: Adjust negative lithography parameters to reduce film angle and facilitate subsequent film growth.
- **Improve Deposition Parameters**: Adjust argon sputtering pressure and RF power to enhance the uniformity and mechanical stability of the niobium film.

With these improvements, the new samples did not exhibit current-dependent parasitic resistance during testing, thereby enhancing the detector's performance and reliability.