Current-density-modulated antiferromagnetic domain switching revealed by optical imaging in the bilayer

Tong Wu,Haoran Chen,Tianping Ma,Jia Xu,Yizheng Wu
DOI: https://doi.org/10.1103/physrevapplied.21.044054
IF: 4.6
2024-04-30
Physical Review Applied
Abstract:Efficient control of antiferromagnetic (AFM) domain switching in thin films is vital for advancing antiferromagnet-based memory devices. In this study, we directly observed the current-driven switching process of CoO AFM domains in the Pt/CoO(001) bilayer through the magneto-optical birefringence effect. The observed critical current density for AFM domain switching remains nearly constant across varying CoO thicknesses, associated with consistent switching polarity, n ⊥ j —where n and j stand for the Néel vector and current density vector, respectively—suggesting the dominance of the thermomagnetoelastic effect. Further confirmation comes from a similar switching process with n ⊥ j observed in the Pt/Al2O3/CoO sample, excluding the contribution of spin-current injection. Remarkably, it was also surprisingly observed that the Néel vector could be further switched parallel to the current direction ( n || j ) at higher current density. Our findings not only enhance our understanding of current-driven AFM domain switching but also present alternative avenues for manipulating AFM domains. https://doi.org/10.1103/PhysRevApplied.21.044054 © 2024 American Physical Society
physics, applied
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