Graphite/h-BN van der Waals heterostructure as a gate stack for HgTe quantum wells

Xianhu Liang,Saquib Shamim,Dongyun Chen,Lena Fürst,Takashi Taniguchi,Kenji Watanabe,Hartmut Buhmann,Johannes Kleinlein,Laurens W Molenkamp

DOI: https://doi.org/10.1088/1361-6528/ad501c

IF: 3.5

2024-05-25

Nanotechnology

Abstract:Two dimensional topological insulators have attracted much interest due to their potential applications in spintronics and quantum computing. To access the exotic physical phenomena, a gate electric field is required to tune the Fermi level into the bulk band gap. Hexagonal boron nitride (h-BN) is a promising alternative gate dielectric due to its unique advantages such as flat and charge-free surface. Here we present a hexagonal boron nitride/graphite van der Waals heterostructure as a top gate on HgTe heterostructure-based Hall bar devices. We compare our results to devices with h-BN/Ti/Au and HfO2/Ti/Au gates. Devices with a h-BN/graphite gate show no charge carrier density shift compared to as-grown structures, in contrast to a significant n-type carrier density increase for HfO2/Ti/Au. We attribute this observation mainly to the comparable work function of HgTe and graphite. In addition, devices with hexagonal boron nitride gate dielectric show slightly higher electron mobility compared to HfO2-based devices. Our results demonstrate the compatibility between layered materials transfer and wet-etched structures and provide a strategy to solve the issue of significant shifts of the carrier density in gated HgTe heterostructures.

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied