Abstract:A series of DTPC‐based A‐D‐A‐type small molecules featuring super‐large π‐conjugation area are developed, exhibiting n‐type transport properties. Central core non‐fluorinated molecules exhibited stronger π‐π stacking, achieving superior electron mobility of 0.52 cm2 V−1 s−1 in an OFET device. This work demonstrates that expanding the π‐conjugated area and regulating electrostatic interactions hold great potential for developing high‐performance n‐type organic semiconductors. N‐type organic semiconductors are essential for the advancement of organic electronic devices. However, in relation to extensive research on n‐type and p‐type polymers, studies on high‐mobility n‐type small‐molecule semiconductors (SMSCs) are limited. Here, a series of ultra‐narrow bandgap n‐type SMSCs are developed on an A‐D‐A‐type structure. These SMSCs feature an exceptionally large π‐conjugated area, leading to strong intramolecular charge transfer and robust π‐π interactions. For the first time, central core and terminal halogenation are employed to control molecular surface electrostatic potential distribution, thereby regulating the π‐π stacking area (Sπ‐π) and studying their correlation. The research reveals that, in n‐type SMSCs with an edge‐on arrangement, introducing fluorine into the 2D central core can reduce the Sπ‐π, which is detrimental to the electron mobility (μe) of organic field‐effect transistors (OFETs). Conversely, terminal chlorination facilitates electron injection and improves μe. Consequently, DTPC‐OD‐4Cl, featuring shorter alkyl side chains and a non‐fluorinated 2D central core and undergoing terminal chlorination, achieved the highest μe of up to 0.52 cm2 V−1 s−1, ranking among the highest values reported for A‐D‐A type SMSCs. This work not only systematically investigated the influence of molecular structure on mobility but also provided novel insights for designing more efficient n‐type SMSCs.

High Mobility n‐Type Imide‐Based Semiconductor with Unusual Single‐Crystal Packing Structure in Solution‐Processed Thin Film (Adv. Funct. Mater. 39/2024)

High Mobility n‐Type Imide‐Based Semiconductor with Unusual Single‐Crystal Packing Structure in Solution‐Processed Thin Film

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High Performance N-Type Single Crystalline Transistors of Naphthalene Bis(dicarboximide) and Their Anisotropic Transport in Crystals